Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation

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Date:	2015
Main Authors:	P. I. Baranskyi, H. P. Haidar
Format:	Article
Language:	English
Published:	2015
Series:	Optoelectronics and Semiconductor Technique
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0001061482
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Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

id	open-sciencenbuvgovua-68455
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spelling	open-sciencenbuvgovua-684552024-04-16T13:34:19Z Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation P. I. Baranskyi H. P. Haidar 2707-6806 2015 en Optoelectronics and Semiconductor Technique http://jnas.nbuv.gov.ua/article/UJRN-0001061482 Article
institution	Library portal of National Academy of Sciences of Ukraine \| LibNAS
collection	Open-Science
language	English
series	Optoelectronics and Semiconductor Technique
spellingShingle	Optoelectronics and Semiconductor Technique P. I. Baranskyi H. P. Haidar Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation
format	Article
author	P. I. Baranskyi H. P. Haidar
author_facet	P. I. Baranskyi H. P. Haidar
author_sort	P. I. Baranskyi
title	Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation
title_short	Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation
title_full	Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation
title_fullStr	Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation
title_full_unstemmed	Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation
title_sort	comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation
publishDate	2015
url	http://jnas.nbuv.gov.ua/article/UJRN-0001061482
work_keys_str_mv	AT pibaranskyi comparisonoftheelectrophysicalpropertiesofsiliconcrystalsdopedwithphosphorusthroughthemeltandbyusingthemethodofnucleartransmutation AT hphaidar comparisonoftheelectrophysicalpropertiesofsiliconcrystalsdopedwithphosphorusthroughthemeltandbyusingthemethodofnucleartransmutation
first_indexed	2025-07-22T05:55:37Z
last_indexed	2025-07-22T05:55:37Z
_version_	1850418470461636608

Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation

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