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Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation

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Bibliographic Details
Date:	2015
Main Authors:	P. I. Baranskyi, H. P. Haidar
Format:	Article
Language:	English
Published:	2015
Series:	Optoelectronics and Semiconductor Technique
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0001061482
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Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

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