Changing of the anisotropy parameter of mobility in n-Ge single crystals with heterogeneous distribution of doping impurity
Saved in:
| Date: | 2014 |
|---|---|
| Main Authors: | D. A. Zakharchuk, Y. V. Koval, L. V. Yashchynskiy, S. A. Fedosov |
| Format: | Article |
| Language: | English |
| Published: |
2014
|
| Series: | Nuclear physics and atomic energy |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000339683 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals
by: P. I. Baranskyi, et al.
Published: (2014)
by: P. I. Baranskyi, et al.
Published: (2014)
Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings
by: Gaidar, G.P.
Published: (2015)
by: Gaidar, G.P.
Published: (2015)
Dependence of the anisotropy parameter of drag thermal e.m.f. on the concentration of impurities in n-Ge and n-Si crystals
by: H. P. Haidar, et al.
Published: (2017)
by: H. P. Haidar, et al.
Published: (2017)
Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique
by: Serdega, B.K., et al.
Published: (1999)
by: Serdega, B.K., et al.
Published: (1999)
Some peculiarities of thermopower anisotropy in undeformed and elastically deformed n – Si and n – Ge single crystals
by: G. P. Gaidar, et al.
Published: (2015)
by: G. P. Gaidar, et al.
Published: (2015)
Changes in electrophysical properties of heavily doped n-Ge &lt;As&gt; single crystals under the influence of thermoannealings
by: G. P. Gaidar
Published: (2015)
by: G. P. Gaidar
Published: (2015)
Variation of crystal lattice parameters of KDP single crystals containing impurities
by: Salo, V.I., et al.
Published: (2008)
by: Salo, V.I., et al.
Published: (2008)
Influence of -irradiation (60So) on the concentration and mobility of carriers in Ge and Si single crystals of n-type
by: G. P. Gaidar
Published: (2012)
by: G. P. Gaidar
Published: (2012)
Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type
by: Gaidar, G.P.
Published: (2012)
by: Gaidar, G.P.
Published: (2012)
Contents of doping and background impurities in Si single crystals, obtained by czucibleless electron-beam zone melting
by: Yu. A. Asnis, et al.
Published: (2011)
by: Yu. A. Asnis, et al.
Published: (2011)
Concentration dependences of the anisotropy parameter of mobility K = μ⊥/μ || and the anisotropy parameter of electron-phonon drag thermopower M = α || ph/α⊥ ph IN n-Ge and n-Si
by: G. P. Gaidar, et al.
Published: (2014)
by: G. P. Gaidar, et al.
Published: (2014)
Influence of Cu-, Sn-, and In-doping on optical properties of AgGaGe3 Se8 single crystals
by: A. S. Krymus, et al.
Published: (2016)
by: A. S. Krymus, et al.
Published: (2016)
Influence of Cu-, Sn-, and In-doping on optical properties of AgGaGe3 Se8 single crystals
by: A. S. Krymus, et al.
Published: (2016)
by: A. S. Krymus, et al.
Published: (2016)
Effect of thermal treatment on drag Seebeck coefficient anisotropy parameter of transmutation-doped silicon crystal
by: G. P. Gaidar, et al.
Published: (2016)
by: G. P. Gaidar, et al.
Published: (2016)
Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals
by: G. P. Gaidar, et al.
Published: (2017)
by: G. P. Gaidar, et al.
Published: (2017)
Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals
by: Gaidar, G.P., et al.
Published: (2017)
by: Gaidar, G.P., et al.
Published: (2017)
Anisotropy of mechanical properties of oxide single crystals for inorganic scintillators
by: Babiychuk, I.P., et al.
Published: (2004)
by: Babiychuk, I.P., et al.
Published: (2004)
Physical factors that cause the anisotropy of thermoelectromotive and the anisotropy of mobility in multivalley semiconductors
by: P. I. Baranskyi, et al.
Published: (2013)
by: P. I. Baranskyi, et al.
Published: (2013)
Concentration dependences of dielectric parameters of impurity-doped K2SO4 crystals
by: Yo. Stadnyk, et al.
Published: (2022)
by: Yo. Stadnyk, et al.
Published: (2022)
Concentration dependences of dielectric parameters of impurity-doped K2SO4 crystals
by: V. Y. Stadnyk, et al.
Published: (2022)
by: V. Y. Stadnyk, et al.
Published: (2022)
Crystallization kinetics of Ge₂₂Sb₂₂Tе₅₆ doped with Se and Ni
by: Garsia-Garsia, E., et al.
Published: (1998)
by: Garsia-Garsia, E., et al.
Published: (1998)
Structural features of doped silicon single crystals
by: Azarenkov, N.A., et al.
Published: (2022)
by: Azarenkov, N.A., et al.
Published: (2022)
Peculiariries of thermoannealing in n-Si and n-Ge crystals with oxygen impurity
by: P. I. Baranskii, et al.
Published: (2012)
by: P. I. Baranskii, et al.
Published: (2012)
Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals
by: H. P. Haidar, et al.
Published: (2016)
by: H. P. Haidar, et al.
Published: (2016)
Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity
by: Baranskii, P.I., et al.
Published: (2012)
by: Baranskii, P.I., et al.
Published: (2012)
Anisotropy of magnetoresistance in untwinned YBa₂Cu₃O₇₋δ single crystals
by: Vovk, R.V., et al.
Published: (2012)
by: Vovk, R.V., et al.
Published: (2012)
Influence of the high-temperature annealing on the anisotropy parameters of mobility and the anisotropy of the thermoelectromotive-drag of electrons by phonons in n-Si
by: P. I. Baranskyi, et al.
Published: (2014)
by: P. I. Baranskyi, et al.
Published: (2014)
Concentration maxima of the mobility of 2D electrons scattered by correlated impurity ions in thin doped layers
by: V. M. Mikheev
Published: (2019)
by: V. M. Mikheev
Published: (2019)
Magnetic properties lithium-doped manganite single crystals
by: Barilo, S.N., et al.
Published: (2001)
by: Barilo, S.N., et al.
Published: (2001)
Influence of the illumination on the mobility of 2D electrons scattered on the correlated distribution of impurity ions
by: V. M. Mikheev
Published: (2017)
by: V. M. Mikheev
Published: (2017)
Investigation of dislocations in Ge single crystals by scanning electron beam
by: Nadtochy, V., et al.
Published: (2004)
by: Nadtochy, V., et al.
Published: (2004)
Variations in electrophysical properties of heavily doped single crystals of n-Ge&lt;As&gt; under the effect of thermal annealings
by: H. P. Haidar
Published: (2018)
by: H. P. Haidar
Published: (2018)
Radiation defects parameters determination in n-Ge single crystals irradiated by high-energy electrons
by: S. V. Lunov, et al.
Published: (2016)
by: S. V. Lunov, et al.
Published: (2016)
Study on gaseous impurities in alpha-alumina, used single crystals growing
by: Blank, T.A., et al.
Published: (2005)
by: Blank, T.A., et al.
Published: (2005)
Changes of anisotropy of dilatative and optical properties of DGN crystal at ferroelectric phase transition
by: Andriyevsky, B.V., et al.
Published: (2003)
by: Andriyevsky, B.V., et al.
Published: (2003)
X-ray dosimetry of copper-doped CdGa₂S₄ single crystals
by: Mustafaeva, S.N., et al.
Published: (2012)
by: Mustafaeva, S.N., et al.
Published: (2012)
X-ray characterization of ZnSe single crystals doped with Mg
by: Fedorov, A.G., et al.
Published: (2001)
by: Fedorov, A.G., et al.
Published: (2001)
Defect-and-impurity state of type Ib diamond single crystals of the cubic habit
by: E. M. Suprun, et al.
Published: (2016)
by: E. M. Suprun, et al.
Published: (2016)
Anisotropy of electron phonon drag thermoEMF in n-Ge
by: P. I. Baranskii, et al.
Published: (2012)
by: P. I. Baranskii, et al.
Published: (2012)
The method of shear modulus determination for n-Ge and n-Si single crystals
by: V. I. Shvabiuk, et al.
Published: (2017)
by: V. I. Shvabiuk, et al.
Published: (2017)
Similar Items
-
Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals
by: P. I. Baranskyi, et al.
Published: (2014) -
Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings
by: Gaidar, G.P.
Published: (2015) -
Dependence of the anisotropy parameter of drag thermal e.m.f. on the concentration of impurities in n-Ge and n-Si crystals
by: H. P. Haidar, et al.
Published: (2017) -
Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique
by: Serdega, B.K., et al.
Published: (1999) -
Some peculiarities of thermopower anisotropy in undeformed and elastically deformed n – Si and n – Ge single crystals
by: G. P. Gaidar, et al.
Published: (2015)