Gaidar, G. P. (2014). Investigation of the influence of isovalent impurity of silicon and -irradiation (60Co) on electrophysical parameters of n-Ge Sb.
Chicago-Zitierstil (17. Ausg.)Gaidar, G. P. Investigation of the Influence of Isovalent Impurity of Silicon and -irradiation (60Co) on Electrophysical Parameters of N-Ge Sb. 2014.
MLA-Zitierstil (8. Ausg.)Gaidar, G. P. Investigation of the Influence of Isovalent Impurity of Silicon and -irradiation (60Co) on Electrophysical Parameters of N-Ge Sb. 2014.
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