Gaidar, G. P. (2014). Investigation of the influence of isovalent impurity of silicon and -irradiation (60Co) on electrophysical parameters of n-Ge Sb.
Chicago Style (17th ed.) CitationGaidar, G. P. Investigation of the Influence of Isovalent Impurity of Silicon and -irradiation (60Co) on Electrophysical Parameters of N-Ge Sb. 2014.
MLA (8th ed.) CitationGaidar, G. P. Investigation of the Influence of Isovalent Impurity of Silicon and -irradiation (60Co) on Electrophysical Parameters of N-Ge Sb. 2014.
Warning: These citations may not always be 100% accurate.