Investigation of the influence of isovalent impurity of silicon and -irradiation (60Co) on electrophysical parameters of n-Ge Sb
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| Datum: | 2014 |
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| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
2014
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| Schriftenreihe: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Online Zugang: | http://jnas.nbuv.gov.ua/article/UJRN-0000352568 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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open-sciencenbuvgovua-726802024-04-16T17:08:31Z Investigation of the influence of isovalent impurity of silicon and -irradiation (60Co) on electrophysical parameters of n-Ge Sb G. P. Gaidar 1560-8034 2014 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000352568 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spellingShingle |
Semiconductor Physics, Quantum Electronics and Optoelectronics G. P. Gaidar Investigation of the influence of isovalent impurity of silicon and -irradiation (60Co) on electrophysical parameters of n-Ge Sb |
| format |
Article |
| author |
G. P. Gaidar |
| author_facet |
G. P. Gaidar |
| author_sort |
G. P. Gaidar |
| title |
Investigation of the influence of isovalent impurity of silicon and -irradiation (60Co) on electrophysical parameters of n-Ge Sb |
| title_short |
Investigation of the influence of isovalent impurity of silicon and -irradiation (60Co) on electrophysical parameters of n-Ge Sb |
| title_full |
Investigation of the influence of isovalent impurity of silicon and -irradiation (60Co) on electrophysical parameters of n-Ge Sb |
| title_fullStr |
Investigation of the influence of isovalent impurity of silicon and -irradiation (60Co) on electrophysical parameters of n-Ge Sb |
| title_full_unstemmed |
Investigation of the influence of isovalent impurity of silicon and -irradiation (60Co) on electrophysical parameters of n-Ge Sb |
| title_sort |
investigation of the influence of isovalent impurity of silicon and -irradiation (60co) on electrophysical parameters of n-ge sb |
| publishDate |
2014 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0000352568 |
| work_keys_str_mv |
AT gpgaidar investigationoftheinfluenceofisovalentimpurityofsiliconandirradiation60coonelectrophysicalparametersofngesb |
| first_indexed |
2025-07-22T07:02:40Z |
| last_indexed |
2025-07-22T07:02:40Z |
| _version_ |
1850418929608949760 |