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Investigation of the influence of isovalent impurity of silicon and -irradiation (60Co) on electrophysical parameters of n-Ge Sb

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Bibliographic Details
Date:	2014
Main Author:	G. P. Gaidar
Format:	Article
Language:	English
Published:	2014
Series:	Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000352568
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Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

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