Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm
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| Datum: | 2014 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
2014
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| Schriftenreihe: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Online Zugang: | http://jnas.nbuv.gov.ua/article/UJRN-0000352931 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859529761522450432 |
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| author | Yu. Dobrovolskyi L. Pidkamin V. Brus V. Kuzenko |
| author_facet | Yu. Dobrovolskyi L. Pidkamin V. Brus V. Kuzenko |
| author_sort | Yu. Dobrovolskyi |
| collection | Open-Science |
| first_indexed | 2025-07-22T07:03:40Z |
| format | Article |
| id | open-sciencenbuvgovua-72717 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-22T07:03:40Z |
| publishDate | 2014 |
| record_format | dspace |
| series | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spelling | open-sciencenbuvgovua-727172024-04-16T17:08:53Z Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm Yu. Dobrovolskyi L. Pidkamin V. Brus V. Kuzenko 1560-8034 2014 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000352931 Article |
| spellingShingle | Semiconductor Physics, Quantum Electronics and Optoelectronics Yu. Dobrovolskyi L. Pidkamin V. Brus V. Kuzenko Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm |
| title | Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm |
| title_full | Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm |
| title_fullStr | Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm |
| title_full_unstemmed | Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm |
| title_short | Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm |
| title_sort | photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000352931 |
| work_keys_str_mv | AT yudobrovolskyi photodiodebasedonepitaxialsiliconwithhighsensitivityatthewavelength254nm AT lpidkamin photodiodebasedonepitaxialsiliconwithhighsensitivityatthewavelength254nm AT vbrus photodiodebasedonepitaxialsiliconwithhighsensitivityatthewavelength254nm AT vkuzenko photodiodebasedonepitaxialsiliconwithhighsensitivityatthewavelength254nm |