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Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm

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Bibliographic Details
Main Authors: Yu. Dobrovolskyi, L. Pidkamin, V. Brus, V. Kuzenko
Format: Article
Language:English
Published: 2014
Series:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000352931
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id open-sciencenbuvgovua-72717
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spelling open-sciencenbuvgovua-727172024-04-16T17:08:53Z Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm Yu. Dobrovolskyi L. Pidkamin V. Brus V. Kuzenko 1560-8034 2014 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000352931 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Semiconductor Physics, Quantum Electronics and Optoelectronics
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
Yu. Dobrovolskyi
L. Pidkamin
V. Brus
V. Kuzenko
Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm
format Article
author Yu. Dobrovolskyi
L. Pidkamin
V. Brus
V. Kuzenko
author_facet Yu. Dobrovolskyi
L. Pidkamin
V. Brus
V. Kuzenko
author_sort Yu. Dobrovolskyi
title Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm
title_short Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm
title_full Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm
title_fullStr Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm
title_full_unstemmed Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm
title_sort photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm
publishDate 2014
url http://jnas.nbuv.gov.ua/article/UJRN-0000352931
work_keys_str_mv AT yudobrovolskyi photodiodebasedonepitaxialsiliconwithhighsensitivityatthewavelength254nm
AT lpidkamin photodiodebasedonepitaxialsiliconwithhighsensitivityatthewavelength254nm
AT vbrus photodiodebasedonepitaxialsiliconwithhighsensitivityatthewavelength254nm
AT vkuzenko photodiodebasedonepitaxialsiliconwithhighsensitivityatthewavelength254nm
first_indexed 2024-04-17T05:14:33Z
last_indexed 2024-04-17T05:14:33Z
_version_ 1796884864093388800