Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm
Збережено в:
| Дата: | 2014 |
|---|---|
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
2014
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| Назва видання: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000352931 |
| Теги: |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Репозитарії
Library portal of National Academy of Sciences of Ukraine | LibNAS| id |
open-sciencenbuvgovua-72717 |
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open-sciencenbuvgovua-727172024-04-16T17:08:53Z Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm Yu. Dobrovolskyi L. Pidkamin V. Brus V. Kuzenko 1560-8034 2014 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000352931 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spellingShingle |
Semiconductor Physics, Quantum Electronics and Optoelectronics Yu. Dobrovolskyi L. Pidkamin V. Brus V. Kuzenko Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm |
| format |
Article |
| author |
Yu. Dobrovolskyi L. Pidkamin V. Brus V. Kuzenko |
| author_facet |
Yu. Dobrovolskyi L. Pidkamin V. Brus V. Kuzenko |
| author_sort |
Yu. Dobrovolskyi |
| title |
Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm |
| title_short |
Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm |
| title_full |
Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm |
| title_fullStr |
Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm |
| title_full_unstemmed |
Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm |
| title_sort |
photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm |
| publishDate |
2014 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0000352931 |
| work_keys_str_mv |
AT yudobrovolskyi photodiodebasedonepitaxialsiliconwithhighsensitivityatthewavelength254nm AT lpidkamin photodiodebasedonepitaxialsiliconwithhighsensitivityatthewavelength254nm AT vbrus photodiodebasedonepitaxialsiliconwithhighsensitivityatthewavelength254nm AT vkuzenko photodiodebasedonepitaxialsiliconwithhighsensitivityatthewavelength254nm |
| first_indexed |
2024-04-17T05:14:33Z |
| last_indexed |
2024-04-17T05:14:33Z |
| _version_ |
1796884864093388800 |