Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics
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| Date: | 2014 |
|---|---|
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Published: |
2014
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| Series: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000353053 |
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| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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open-sciencenbuvgovua-727422024-04-16T17:09:11Z Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics Ya. Ya. Kudryk V. V. Shynkarenko V. S. Slipokurov R. I. Bigun Ya. Kudryk 1560-8034 2014 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000353053 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spellingShingle |
Semiconductor Physics, Quantum Electronics and Optoelectronics Ya. Ya. Kudryk V. V. Shynkarenko V. S. Slipokurov R. I. Bigun Ya. Kudryk Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics |
| format |
Article |
| author |
Ya. Ya. Kudryk V. V. Shynkarenko V. S. Slipokurov R. I. Bigun Ya. Kudryk |
| author_facet |
Ya. Ya. Kudryk V. V. Shynkarenko V. S. Slipokurov R. I. Bigun Ya. Kudryk |
| author_sort |
Ya. Ya. Kudryk |
| title |
Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics |
| title_short |
Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics |
| title_full |
Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics |
| title_fullStr |
Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics |
| title_full_unstemmed |
Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics |
| title_sort |
determination of the schottky barrier height in diodes based on au-tib2-n-sic 6h from the current-voltage and capacitance-voltage characteristics |
| publishDate |
2014 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0000353053 |
| work_keys_str_mv |
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| first_indexed |
2025-07-22T07:03:49Z |
| last_indexed |
2025-07-22T07:03:49Z |
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