Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics
Збережено в:
| Дата: | 2014 |
|---|---|
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
2014
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| Назва видання: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000353053 |
| Теги: |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Репозитарії
Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859529765936955392 |
|---|---|
| author | Ya. Ya. Kudryk V. V. Shynkarenko V. S. Slipokurov R. I. Bigun Ya. Kudryk |
| author_facet | Ya. Ya. Kudryk V. V. Shynkarenko V. S. Slipokurov R. I. Bigun Ya. Kudryk |
| author_sort | Ya. Ya. Kudryk |
| collection | Open-Science |
| first_indexed | 2025-07-22T07:03:49Z |
| format | Article |
| id | open-sciencenbuvgovua-72742 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-22T07:03:49Z |
| publishDate | 2014 |
| record_format | dspace |
| series | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spelling | open-sciencenbuvgovua-727422024-04-16T17:09:11Z Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics Ya. Ya. Kudryk V. V. Shynkarenko V. S. Slipokurov R. I. Bigun Ya. Kudryk 1560-8034 2014 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000353053 Article |
| spellingShingle | Semiconductor Physics, Quantum Electronics and Optoelectronics Ya. Ya. Kudryk V. V. Shynkarenko V. S. Slipokurov R. I. Bigun Ya. Kudryk Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics |
| title | Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics |
| title_full | Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics |
| title_fullStr | Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics |
| title_full_unstemmed | Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics |
| title_short | Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics |
| title_sort | determination of the schottky barrier height in diodes based on au-tib2-n-sic 6h from the current-voltage and capacitance-voltage characteristics |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000353053 |
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