Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics

Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics

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Datum:2014
Hauptverfasser: Ya. Ya. Kudryk, V. V. Shynkarenko, V. S. Slipokurov, R. I. Bigun, Ya. Kudryk
Format: Artikel
Sprache:English
Veröffentlicht: 2014
Schriftenreihe:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Zugang:http://jnas.nbuv.gov.ua/article/UJRN-0000353053
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
id open-sciencenbuvgovua-72742
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spelling open-sciencenbuvgovua-727422024-04-16T17:09:11Z Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics Ya. Ya. Kudryk V. V. Shynkarenko V. S. Slipokurov R. I. Bigun Ya. Kudryk 1560-8034 2014 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000353053 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Semiconductor Physics, Quantum Electronics and Optoelectronics
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
Ya. Ya. Kudryk
V. V. Shynkarenko
V. S. Slipokurov
R. I. Bigun
Ya. Kudryk
Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics
format Article
author Ya. Ya. Kudryk
V. V. Shynkarenko
V. S. Slipokurov
R. I. Bigun
Ya. Kudryk
author_facet Ya. Ya. Kudryk
V. V. Shynkarenko
V. S. Slipokurov
R. I. Bigun
Ya. Kudryk
author_sort Ya. Ya. Kudryk
title Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics
title_short Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics
title_full Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics
title_fullStr Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics
title_full_unstemmed Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics
title_sort determination of the schottky barrier height in diodes based on au-tib2-n-sic 6h from the current-voltage and capacitance-voltage characteristics
publishDate 2014
url http://jnas.nbuv.gov.ua/article/UJRN-0000353053
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AT ribigun determinationoftheschottkybarrierheightindiodesbasedonautib2nsic6hfromthecurrentvoltageandcapacitancevoltagecharacteristics
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first_indexed 2025-07-22T07:03:49Z
last_indexed 2025-07-22T07:03:49Z
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