Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics
Saved in:
| Date: | 2014 |
|---|---|
| Main Authors: | Ya. Ya. Kudryk, V. V. Shynkarenko, V. S. Slipokurov, R. I. Bigun, Ya. Kudryk |
| Format: | Article |
| Language: | English |
| Published: |
2014
|
| Series: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000353053 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics
by: Kudryk, Ya.Ya., et al.
Published: (2014)
by: Kudryk, Ya.Ya., et al.
Published: (2014)
Schottky-barrier Au–TiBx–n-GaN contacts
by: Ya. Kudryk
Published: (2015)
by: Ya. Kudryk
Published: (2015)
SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
by: Boltovets, N.S., et al.
Published: (2004)
by: Boltovets, N.S., et al.
Published: (2004)
Determination of the temperature dependence of electron effective mass in 4H-SiC from reverse current-voltage characteristics of 4H-SiC Schottky barrier diodes
by: Latreche, A.
Published: (2020)
by: Latreche, A.
Published: (2020)
On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes
by: Belyaev, A.E., et al.
Published: (2007)
by: Belyaev, A.E., et al.
Published: (2007)
Methods for deter-mination of schottky barrier height from I-V curves (review)
by: Ja. Ja. Kudrik, et al.
Published: (2014)
by: Ja. Ja. Kudrik, et al.
Published: (2014)
On the work function and Schottky barrier heights of metal nanofilms in a dielectric environment
by: A. V. Babich
Published: (2014)
by: A. V. Babich
Published: (2014)
On the work function and Schottky barrier heights of metal nanofilms in a dielectric environment
by: A. V. Babich
Published: (2014)
by: A. V. Babich
Published: (2014)
Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes
by: A. Latreche
Published: (2019)
by: A. Latreche
Published: (2019)
Combination of thermionic emission and tunneling mechanisms to analyze the leakage current for 4H-SiC Schottky barrier diodes
by: Latreche, A.
Published: (2019)
by: Latreche, A.
Published: (2019)
Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes
by: Ya. Ya. Kudryk, et al.
Published: (2019)
by: Ya. Ya. Kudryk, et al.
Published: (2019)
Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes
by: Kudryk, Ya.Ya., et al.
Published: (2019)
by: Kudryk, Ya.Ya., et al.
Published: (2019)
Formation of ickel-platinum silicide layer as a barrier Schottky diodes
by: P. V. Kuchinskij, et al.
Published: (2014)
by: P. V. Kuchinskij, et al.
Published: (2014)
Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor
by: S. I. Vlasov, et al.
Published: (2010)
by: S. I. Vlasov, et al.
Published: (2010)
Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor
by: Vlasov, S.I., et al.
Published: (2010)
by: Vlasov, S.I., et al.
Published: (2010)
Peculiarities of study of Au–Ti–Pd–n+-n-n+-Si multilayer contact structure to avalanche transit-time diodes
by: P. M. Romanets, et al.
Published: (2019)
by: P. M. Romanets, et al.
Published: (2019)
Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes
by: Romanets, P.M., et al.
Published: (2019)
by: Romanets, P.M., et al.
Published: (2019)
Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures
by: Abdizhaliev, S.K., et al.
Published: (2003)
by: Abdizhaliev, S.K., et al.
Published: (2003)
Modified expressions of field and thermionic-field emission for Schottky barrier diodes in the reverse regime
by: Latreche, A.
Published: (2021)
by: Latreche, A.
Published: (2021)
Conduction mechanisms of the reverse leakage current of β-Ga₂O₃ Schottky barrier diodes
by: Latreche, A.
Published: (2019)
by: Latreche, A.
Published: (2019)
Simulation of combined schottky diode
by: Кісельов, Єгор Миколайович
Published: (2015)
by: Кісельов, Єгор Миколайович
Published: (2015)
Simulation of combined schottky diode
by: Кісельов, Єгор Миколайович
Published: (2015)
by: Кісельов, Єгор Миколайович
Published: (2015)
Simulation of combined Schottky diode
by: Ye. M. Kiselov
Published: (2013)
by: Ye. M. Kiselov
Published: (2013)
Impact of traps on current-voltage characteristic of ⁺--⁺ diode
by: Kruglenko, P.M.
Published: (2017)
by: Kruglenko, P.M.
Published: (2017)
Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes
by: Romanets, P.M., et al.
Published: (2016)
by: Romanets, P.M., et al.
Published: (2016)
Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes
by: A. Latreche
Published: (2019)
by: A. Latreche
Published: (2019)
Investigation of the intermediate layers of a diode with a Schottky barrier Al-pCdTe-Mo
by: Sh. A. Mirsagatov, et al.
Published: (2012)
by: Sh. A. Mirsagatov, et al.
Published: (2012)
Features of charge transport in Mo/n-Si structures with a Schottky barrier
by: Ya. Olikh
Published: (2013)
by: Ya. Olikh
Published: (2013)
Features of charge transport in Mo/n-Si structures with a Schottky barrier
by: Ya. Olikh
Published: (2013)
by: Ya. Olikh
Published: (2013)
Ultimate effect of non-identity of capacitive elements of high-voltage arm on frequency characteristics of voltage divider (analytical research)
by: Brzhezitsky, V. O., et al.
Published: (2021)
by: Brzhezitsky, V. O., et al.
Published: (2021)
Attainable electron energy in diode with plasma cathode at the given voltage
by: Ostroushko, V., et al.
Published: (2019)
by: Ostroushko, V., et al.
Published: (2019)
Degradation of voltage-current characteristics of gallium phosphide diodes due to radiation-induced defects
by: Dubovyi, V.K., et al.
Published: (2005)
by: Dubovyi, V.K., et al.
Published: (2005)
Nonlinear Analysis of Millimeter-Wave Schottky Diode Mixers
by: Piddyachiy, V. I., et al.
Published: (2013)
by: Piddyachiy, V. I., et al.
Published: (2013)
The impact of parasitic capacitances on the accuracy of scale transformation of high-voltage dividers
by: Haran, Y. O., et al.
Published: (2025)
by: Haran, Y. O., et al.
Published: (2025)
Influence of Interwinding Capacitance on Exactness of Work of High-Voltage Current Transformer
by: G. M. Varskij
Published: (2014)
by: G. M. Varskij
Published: (2014)
Improvement of the reverse characteristics of Schottky diodes using gettering
by: V. N. Litvinenko, et al.
Published: (2019)
by: V. N. Litvinenko, et al.
Published: (2019)
Improvement of the reverse characteristics of Schottky diodes using gettering
by: Litvinenko, V.N., et al.
Published: (2019)
by: Litvinenko, V.N., et al.
Published: (2019)
New circuits of high-voltage pulse generators with inductive-capacitive energy storage
by: Gordeev, V.S., et al.
Published: (2001)
by: Gordeev, V.S., et al.
Published: (2001)
Технология изготовления контактов к карбиду кремния
by: Kudryk, Ya. Ya., et al.
Published: (2013)
by: Kudryk, Ya. Ya., et al.
Published: (2013)
Controlling voltage drops in silicon diodes by electron irradiation and thermal treatment
by: A. V. Karimov, et al.
Published: (2018)
by: A. V. Karimov, et al.
Published: (2018)
Similar Items
-
Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics
by: Kudryk, Ya.Ya., et al.
Published: (2014) -
Schottky-barrier Au–TiBx–n-GaN contacts
by: Ya. Kudryk
Published: (2015) -
SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
by: Boltovets, N.S., et al.
Published: (2004) -
Determination of the temperature dependence of electron effective mass in 4H-SiC from reverse current-voltage characteristics of 4H-SiC Schottky barrier diodes
by: Latreche, A.
Published: (2020) -
On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes
by: Belyaev, A.E., et al.
Published: (2007)