Compensation of parasitic elements of transistor in the class F amplifier with the tuning of impedances at harmonics
Gespeichert in:
| Datum: | 2014 |
|---|---|
| Hauptverfasser: | A. P. Efimovich, V. G. Kryzhanovskij |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
2014
|
| Schriftenreihe: | Technology and design in electronic equipment |
| Online Zugang: | http://jnas.nbuv.gov.ua/article/UJRN-0000405240 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASÄhnliche Einträge
-
Inverse class-f power amplifier using slot resonators as a harmonic filter
von: Ju. V. Rassokhina, et al.
Veröffentlicht: (2014) -
Features of the amplifying properties of a field-effect transistor in a circuit with dynamic load
von: A. V. Karimov, et al.
Veröffentlicht: (2015) -
Unsaturated Regime as Alternative Method to Provide Stability of Low-Noise Amplifier on High-Electron-Mobility Transistors
von: Korolev, O. M., et al.
Veröffentlicht: (2012) -
Analyzing the particularities of electronic circuits simulation in the software package Simulink using a transistor amplifier as an example
von: I. V. Melnyk
Veröffentlicht: (2016) -
Investigation of the effect of noise on the operation of the charge sensitive amplifier with compensated pyroelectric interference
von: V. I. Startsev, et al.
Veröffentlicht: (2015)