Development of deep silicon plasma etching for 3D integration technology

Збережено в:
Бібліографічні деталі
Дата:2014
Автори: A. A. Golishnikov, M. G. Putrja
Формат: Стаття
Мова:Англійська
Опубліковано: 2014
Назва видання:Technology and design in electronic equipment
Онлайн доступ:http://jnas.nbuv.gov.ua/article/UJRN-0000405244
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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author A. A. Golishnikov
M. G. Putrja
author_facet A. A. Golishnikov
M. G. Putrja
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spelling open-sciencenbuvgovua-738132024-04-16T17:15:37Z Development of deep silicon plasma etching for 3D integration technology A. A. Golishnikov M. G. Putrja 2225-5818 2014 en Technology and design in electronic equipment http://jnas.nbuv.gov.ua/article/UJRN-0000405244 Article
spellingShingle Technology and design in electronic equipment
A. A. Golishnikov
M. G. Putrja
Development of deep silicon plasma etching for 3D integration technology
title Development of deep silicon plasma etching for 3D integration technology
title_full Development of deep silicon plasma etching for 3D integration technology
title_fullStr Development of deep silicon plasma etching for 3D integration technology
title_full_unstemmed Development of deep silicon plasma etching for 3D integration technology
title_short Development of deep silicon plasma etching for 3D integration technology
title_sort development of deep silicon plasma etching for 3d integration technology
url http://jnas.nbuv.gov.ua/article/UJRN-0000405244
work_keys_str_mv AT aagolishnikov developmentofdeepsiliconplasmaetchingfor3dintegrationtechnology
AT mgputrja developmentofdeepsiliconplasmaetchingfor3dintegrationtechnology