Increasing the radiation resistance of single-crystal silicon epitaxial layers
Saved in:
| Date: | 2014 |
|---|---|
| Main Authors: | Sh. D. Kurmashev, O. A. Kulinich, G. I. Brusenskaja, A. V. Veremeva |
| Format: | Article |
| Language: | English |
| Published: |
2014
|
| Series: | Technology and design in electronic equipment |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000405306 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
-
Radiation destruction and internal friction in silicon single crystals
by: Ryzhikov, V.D., et al.
Published: (2004) -
Single-crystal silicon solar cell efficiency increase in magnetic field
by: Zaitsev, R.V., et al.
Published: (2010) -
Procedure of nanodimensional amorphous-microcrystalline structure formation by radiation in single crystal silicon
by: Dovbnya, A.N., et al.
Published: (2009) -
Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy
by: Kulyk, S.P., et al.
Published: (2008) -
Structural features of doped silicon single crystals
by: Azarenkov, N.A., et al.
Published: (2022)