Cover Image

Optical properties of irradiated epitaxial GaN films

Saved in:

Bibliographic Details
Date:	2014
Main Authors:	Ye. Bieliaiev, M. I. Kliui, R. V. Konakova, A. M. Lukianov, Yu. M. Sveshnikov, A. M. Kliui
Format:	Article
Language:	English
Published:	2014
Series:	Ukrainian Journal of Physics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000726125
Tags:	Add Tag No Tags, Be the first to tag this record!
Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS

Similar Items

Optical properties of irradiated epitaxial GaN films
by: A. E. Belyaev, et al.
Published: (2014)

Electrophysical сharacteristics of LEDs based on GaN epitaxial films
by: Oleksenko, P.Ph., et al.
Published: (1998)

Impact of proton irradiation on AlGaN/GaN transistors with high electron mobility
by: M. Bataev, et al.
Published: (2011)

Influence of electron irradiation with E = 2 MeV on electrophysical and optical characteristics of green InGaN/GaN LEDs
by: T. I. Mosiuk, et al.
Published: (2023)

Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch
by: Elkadadra, A., et al.
Published: (2010)

Effect of neutron irradiation on characteristics of power InGaN/GaN light-emitting diodes
by: O. I. Vlasenko, et al.
Published: (2015)

Significance of DX-centers for acoustic induced reconstruction processes of defects in GaN/AlGaN
by: Ya. M. Olikh, et al.
Published: (2021)

Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization
by: Naumov, A.V., et al.
Published: (2015)

The influence of irradiation by electrons and γ-quanta on photoelectrical and optical properties of epitaxial Pb₁₋xMnxTe film
by: Abbasov, Sh.M., et al.
Published: (2007)

Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization
by: A. V. Naumov, et al.
Published: (2015)

Reflection coefficient and optical conductivity of gallium nitride GaN
by: J. O. Akinlami, et al.
Published: (2012)

Reflection coefficient and optical conductivity of gallium nitride GaN
by: Akinlami, J.O., et al.
Published: (2012)

Electro-optic effect in GaN/Al0. 15Ga0. 85N single quantum wells for optical switch
by: A. Elkadadra, et al.
Published: (2010)

Nonlinear optical spectroscopy of epitaxial magnetic garnet films
by: Pavlov, V.V., et al.
Published: (2002)

Investigation of traps in AlGaN/GaN heterostructures by ultrasonic vibrations
by: V. V. Kaliuzhnyi, et al.
Published: (2021)

Investigation of traps in AlGaN/GaN heterostructures by ultrasonic vibrations
by: V. V. Kaliuzhnyi, et al.
Published: (2021)

The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure
by: Berrah, S., et al.
Published: (2006)

Influence of pulse magnetic fields treatment on optical properties of GaAs based films
by: R. V. Konakova, et al.
Published: (2014)

X-ray diffraction study of deformation state in InGaN/GaN multilayered structures
by: V. P. Kladko, et al.
Published: (2010)

X-ray diffraction study of deformation state in InGaN/GaN multilayered structures
by: Kladko, V.P., et al.
Published: (2010)

Influence of pulse magnetic fields treatment on optical properties of GaAs based films
by: Konakova, R.V., et al.
Published: (2014)

Sharp interfaces in p+-AlGaAs/n-GaAs epitaxial structures obtained by MOCVD
by: N. M. Vakiv, et al.
Published: (2014)

On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes
by: Belyaev, A.E., et al.
Published: (2007)

Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields
by: G. I. Syngaivska, et al.
Published: (2018)

Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields
by: Syngaivska, G.I., et al.
Published: (2018)

Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy
by: Kladko, V.P., et al.
Published: (2000)

Peculiarities of THz-electromagnetic wave transmission through the GaN films under conditions of cyclotron and optical phonon transit-time resonances
by: V. V. Korotyeyev
Published: (2013)

Peculiarities of THz-electromagnetic wave transmission through the GaN films under conditions of cyclotron and optical phonon transit-time resonances
by: Korotyeyev, V.V.
Published: (2013)

Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs
by: A. G. Golenkov, et al.
Published: (2015)

Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs
by: Golenkov, A.G., et al.
Published: (2015)

Ultra-high field transport in GaN-based heterostructures
by: Vitusevich, S.A., et al.
Published: (2006)

Reduction of reverse leakage current at the TiO₂/GaN interface in field plate Ni/Au/-GaN Schottky diodes
by: Shashikala, B.N., et al.
Published: (2021)

Influence of weak magnetic fields treatment on photoluminescence of GaN:Si
by: S. M. Redko
Published: (2015)

Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density
by: A. V. Sachenko, et al.
Published: (2012)

Polar interface optical phonon states and their dispersive properties of a wurtzite GaN quantum dot: quantum size effect
by: Zhang, L.
Published: (2010)

Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si
by: Red’ko, S.M.
Published: (2015)

Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density
by: Sachenko, A.V., et al.
Published: (2012)

Schottky-barrier Au–TiBx–n-GaN contacts
by: Ya. Kudryk
Published: (2015)

Effect of the sapphire substrate on spectral emission features of LEDs based on InGaN/AlGaN/GaN heterostructures
by: Bletskan, D.I., et al.
Published: (2003)

Electrical and high-frequency properties of compensated GaN under electron streaming conditions
by: G. I. Syngayivska, et al.
Published: (2013)