Optoelectronic properties of thin hydrogenated a-Si1–xGex:H (x = 0ч1) films produced by plasma chemical deposition technique
Збережено в:
| Дата: | 2014 |
|---|---|
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
2014
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| Назва видання: | Ukrainian Journal of Physics |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000726903 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Library portal of National Academy of Sciences of Ukraine | LibNAS| id |
open-sciencenbuvgovua-77658 |
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open-sciencenbuvgovua-776582024-04-16T17:43:58Z Optoelectronic properties of thin hydrogenated a-Si1–xGex:H (x = 0ч1) films produced by plasma chemical deposition technique B. A. Nadzhafov V. V. Dadashova 0372-400X 2014 en Ukrainian Journal of Physics http://jnas.nbuv.gov.ua/article/UJRN-0000726903 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Ukrainian Journal of Physics |
| spellingShingle |
Ukrainian Journal of Physics B. A. Nadzhafov V. V. Dadashova Optoelectronic properties of thin hydrogenated a-Si1–xGex:H (x = 0ч1) films produced by plasma chemical deposition technique |
| format |
Article |
| author |
B. A. Nadzhafov V. V. Dadashova |
| author_facet |
B. A. Nadzhafov V. V. Dadashova |
| author_sort |
B. A. Nadzhafov |
| title |
Optoelectronic properties of thin hydrogenated a-Si1–xGex:H (x = 0ч1) films produced by plasma chemical deposition technique |
| title_short |
Optoelectronic properties of thin hydrogenated a-Si1–xGex:H (x = 0ч1) films produced by plasma chemical deposition technique |
| title_full |
Optoelectronic properties of thin hydrogenated a-Si1–xGex:H (x = 0ч1) films produced by plasma chemical deposition technique |
| title_fullStr |
Optoelectronic properties of thin hydrogenated a-Si1–xGex:H (x = 0ч1) films produced by plasma chemical deposition technique |
| title_full_unstemmed |
Optoelectronic properties of thin hydrogenated a-Si1–xGex:H (x = 0ч1) films produced by plasma chemical deposition technique |
| title_sort |
optoelectronic properties of thin hydrogenated a-si1–xgex:h (x = 0ч1) films produced by plasma chemical deposition technique |
| publishDate |
2014 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0000726903 |
| work_keys_str_mv |
AT banadzhafov optoelectronicpropertiesofthinhydrogenatedasi1xgexhx0č1filmsproducedbyplasmachemicaldepositiontechnique AT vvdadashova optoelectronicpropertiesofthinhydrogenatedasi1xgexhx0č1filmsproducedbyplasmachemicaldepositiontechnique |
| first_indexed |
2024-04-17T05:34:37Z |
| last_indexed |
2024-04-17T05:34:37Z |
| _version_ |
1796885380690083840 |