Obtaining periodic layers GaAs by electrochemical etching
Saved in:
| Date: | 2014 |
|---|---|
| Main Authors: | A. F. Djadenchuk, V. V. Kidalov |
| Format: | Article |
| Language: | English |
| Published: |
2014
|
| Series: | Physical surface engineering |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0001031643 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
-
Preparation of nanoporous n-InP(100) layers by electrochemical etching in HCI solution
by: Sychikova, J.A., et al.
Published: (2010) -
High-resistance low-doped GaAs and AlGaAs layers obtained by LPE
by: Krukovsky, S.I., et al.
Published: (2003) -
Obtaining over-inP/mono-InP overgrowth by electrochemical etching
by: Ya. O. Sychikova
Published: (2011) -
Features of electrochemical processes at the boundary p-GaAs-HF water solution
by: G. A. Pashchenko, et al.
Published: (2018) -
Optical properties of p-type porous GaAs
by: Kidalov, V.V., et al.
Published: (2005)