The dependence of the concentration of excess electrons (Δn) from variable strain (ε) in semiconductors

Збережено в:
Бібліографічні деталі
Дата:2014
Автори: G. Guljamov, M. G. Dadamirzaev
Формат: Стаття
Мова:Англійська
Опубліковано: 2014
Назва видання:Physical surface engineering
Онлайн доступ:http://jnas.nbuv.gov.ua/article/UJRN-0001031646
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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author G. Guljamov
M. G. Dadamirzaev
author_facet G. Guljamov
M. G. Dadamirzaev
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spelling open-sciencenbuvgovua-793402024-04-16T17:55:49Z The dependence of the concentration of excess electrons (Δn) from variable strain (ε) in semiconductors G. Guljamov M. G. Dadamirzaev 1999-8074 2014 en Physical surface engineering http://jnas.nbuv.gov.ua/article/UJRN-0001031646 Article
spellingShingle Physical surface engineering
G. Guljamov
M. G. Dadamirzaev
The dependence of the concentration of excess electrons (Δn) from variable strain (ε) in semiconductors
title The dependence of the concentration of excess electrons (Δn) from variable strain (ε) in semiconductors
title_full The dependence of the concentration of excess electrons (Δn) from variable strain (ε) in semiconductors
title_fullStr The dependence of the concentration of excess electrons (Δn) from variable strain (ε) in semiconductors
title_full_unstemmed The dependence of the concentration of excess electrons (Δn) from variable strain (ε) in semiconductors
title_short The dependence of the concentration of excess electrons (Δn) from variable strain (ε) in semiconductors
title_sort dependence of the concentration of excess electrons (δn) from variable strain (ε) in semiconductors
url http://jnas.nbuv.gov.ua/article/UJRN-0001031646
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AT gguljamov dependenceoftheconcentrationofexcesselectronsdnfromvariablestraineinsemiconductors
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