Surface distribution of the emitting intensity of GaP light-emitting diodes
Saved in:
| Date: | 2013 |
|---|---|
| Main Authors: | O. V. Konoreva, P. H. Lytovchenko, Ye. V. Malyi, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk, V. V. Shlapatska |
| Format: | Article |
| Language: | English |
| Published: |
2013
|
| Series: | Nuclear physics and atomic energy |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000331703 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
Low doses effect in GaP light-emitting diodes
by: O. M. Hontaruk, et al.
Published: (2016)
by: O. M. Hontaruk, et al.
Published: (2016)
Low doses effect in GaP light-emitting diodes
by: Hontaruk, O.M., et al.
Published: (2016)
by: Hontaruk, O.M., et al.
Published: (2016)
Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons
by: O. V. Konoreva, et al.
Published: (2015)
by: O. V. Konoreva, et al.
Published: (2015)
Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons
by: Konoreva, O.V., et al.
Published: (2015)
by: Konoreva, O.V., et al.
Published: (2015)
Influence of complex defects on electrophysical properties of GaP light emitting diodes
by: O. Konoreva, et al.
Published: (2014)
by: O. Konoreva, et al.
Published: (2014)
Influence of complex defects on electrophysical properties of GaP light emitting diodes
by: Konoreva, O., et al.
Published: (2014)
by: Konoreva, O., et al.
Published: (2014)
Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells
by: Konoreva, O., et al.
Published: (2006)
by: Konoreva, O., et al.
Published: (2006)
Radiation influence on characteristics of GaP light emitting diodes
by: Borzakovskyj, A., et al.
Published: (2009)
by: Borzakovskyj, A., et al.
Published: (2009)
Peculiarities of neutron irradiation influence on GaP light-emitting structures
by: Litovchenko, P., et al.
Published: (2009)
by: Litovchenko, P., et al.
Published: (2009)
Peculiarities of electrooptical characteristics of gallium phosphide light-emitting diodes in high injection level conditions
by: O. M. Hontaruk, et al.
Published: (2015)
by: O. M. Hontaruk, et al.
Published: (2015)
Influence of 2 MeV electrons irradiation on gallium phosphide light-emitting diodes reverse currents
by: V. H. Vorobiov, et al.
Published: (2015)
by: V. H. Vorobiov, et al.
Published: (2015)
Effect of neutron irradiation on characteristics of power InGaN/GaN light-emitting diodes
by: O. I. Vlasenko, et al.
Published: (2015)
by: O. I. Vlasenko, et al.
Published: (2015)
Electrical and optical characteristics of GaP diodes, irradiated with 2 MeV electrons
by: O. V. Konoreva, et al.
Published: (2014)
by: O. V. Konoreva, et al.
Published: (2014)
Acoustic emission of the light emitting diodes (review)
by: O. I. Vlasenko, et al.
Published: (2015)
by: O. I. Vlasenko, et al.
Published: (2015)
Ultrasound influence on exciton emission of GaP light diodes
by: Gontaruk, O.M., et al.
Published: (2003)
by: Gontaruk, O.M., et al.
Published: (2003)
Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures
by: V. P. Veleschuk, et al.
Published: (2010)
by: V. P. Veleschuk, et al.
Published: (2010)
Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures
by: Veleschuk, V.P., et al.
Published: (2010)
by: Veleschuk, V.P., et al.
Published: (2010)
1,4-bis(2,2-diphenylethenyl)benzene as an efficient emitting material for organic light emitting diodes
by: Fenenko, L., et al.
Published: (2007)
by: Fenenko, L., et al.
Published: (2007)
Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics
by: Kanevsky, S.O., et al.
Published: (2003)
by: Kanevsky, S.O., et al.
Published: (2003)
Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes
by: A. E. Belyaev, et al.
Published: (2011)
by: A. E. Belyaev, et al.
Published: (2011)
Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes
by: Belyaev, A.E., et al.
Published: (2011)
by: Belyaev, A.E., et al.
Published: (2011)
Numerical study of electrical characteristics of conjugated polymer light-emitting diodes
by: Abouelaoualim, D., et al.
Published: (2008)
by: Abouelaoualim, D., et al.
Published: (2008)
Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity
by: Konoreva, O.V., et al.
Published: (2016)
by: Konoreva, O.V., et al.
Published: (2016)
Europium coordination compounds based on carbacylamidophosphate ligands for metal-organic light-emitting diodes (MOLEDs)
by: O. O. Litsis, et al.
Published: (2013)
by: O. O. Litsis, et al.
Published: (2013)
Europium coordination compounds based on carbacylamidophosphate ligands for metal-organic light-emitting diodes (MOLEDs)
by: Litsis, O.O., et al.
Published: (2013)
by: Litsis, O.O., et al.
Published: (2013)
Radiative recombination in initial and electron-irradiated GaP crystals
by: O. Hontaruk, et al.
Published: (2010)
by: O. Hontaruk, et al.
Published: (2010)
Radiative recombination in initial and electron-irradiated GaP crystals
by: Hontaruk, O., et al.
Published: (2010)
by: Hontaruk, O., et al.
Published: (2010)
A review of high ideality factor in gallium nitride-based light-emitting diode
by: Hedzir, A.S., et al.
Published: (2021)
by: Hedzir, A.S., et al.
Published: (2021)
Modeling of In₀.₁₇Ga₀.₈₃N/InₓGa₁₋ₓN/AlyGa₁₋yN light emitting diode structure on ScAlMgO₄ (0001) substrate for high intensity red emission
by: Hussain, S., et al.
Published: (2020)
by: Hussain, S., et al.
Published: (2020)
Influencing of surfacing chips on extraction of radiation of superbright light emitting diodes on heterostructures InGaN/Al2O3
by: V. I. Osinskij, et al.
Published: (2003)
by: V. I. Osinskij, et al.
Published: (2003)
Acoustic-stimulated relaxation of GaAs1–khPkh LEDs electroluminescence intensity
by: O. V. Konoreva, et al.
Published: (2016)
by: O. V. Konoreva, et al.
Published: (2016)
Application of N-dimethyl benzoylamidophosphate-based coordination compounds in the development of the technology for metalloorganic light-emitting diodes (MOLED)
by: N. S. Kariaka, et al.
Published: (2014)
by: N. S. Kariaka, et al.
Published: (2014)
Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment
by: Nazarov, A.N., et al.
Published: (2005)
by: Nazarov, A.N., et al.
Published: (2005)
Peculiarities of optical absorption near-edge in irradiated GaP:Te
by: Konoreva, O., et al.
Published: (2010)
by: Konoreva, O., et al.
Published: (2010)
Light-emitting properties of BN synthesized by different techniques
by: Yu. Rudko, et al.
Published: (2020)
by: Yu. Rudko, et al.
Published: (2020)
Light-emitting properties of BN synthesized by different techniques
by: Rudko, G.Yu., et al.
Published: (2020)
by: Rudko, G.Yu., et al.
Published: (2020)
Acoustic-emission method of control of defects-formation process in light-emitting structures
by: O. V. Lyashenko, et al.
Published: (2010)
by: O. V. Lyashenko, et al.
Published: (2010)
Acoustic-emission method for controlling the defect-formation process in light-emitting structures
by: Lyashenko, O.V., et al.
Published: (2010)
by: Lyashenko, O.V., et al.
Published: (2010)
Fluctuations of current, electroluminescence and acoustic emission in light-emitting А³В⁵ heterostructures
by: Vlasenko, A.I., et al.
Published: (2008)
by: Vlasenko, A.I., et al.
Published: (2008)
A New Model of Quantum Dot Light Emitting-Absorbing Devices
by: H. Neidhardt, et al.
Published: (2014)
by: H. Neidhardt, et al.
Published: (2014)
Similar Items
-
Low doses effect in GaP light-emitting diodes
by: O. M. Hontaruk, et al.
Published: (2016) -
Low doses effect in GaP light-emitting diodes
by: Hontaruk, O.M., et al.
Published: (2016) -
Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons
by: O. V. Konoreva, et al.
Published: (2015) -
Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons
by: Konoreva, O.V., et al.
Published: (2015) -
Influence of complex defects on electrophysical properties of GaP light emitting diodes
by: O. Konoreva, et al.
Published: (2014)