Configuration transitions of divacancies in silicon and germanium
Saved in:
| Date: | 2013 |
|---|---|
| Main Author: | A. P. Dolgolenko |
| Format: | Article |
| Language: | English |
| Published: |
2013
|
| Series: | Nuclear physics and atomic energy |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000331704 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
-
Charge carrier mobility in the configuration restructuring divacancies in silicon
by: A. P. Dolgolenko
Published: (2014) -
The radiation hardness of pulled silicon doped with germanium
by: Dolgolenko, A.P., et al.
Published: (2007) -
Electron tunneling in the germanium/silicon heterostructure with germanium quantum dots: theory
by: S. I. Pokutnyi, et al.
Published: (2021) -
Features of tensoresistance in single crystals of germanium and silicon with different dopants
by: P. I. Baranskii, et al.
Published: (2016) -
Features of tensoresistance in single crystals of germanium and silicon with different dopants
by: Baranskii, P.I., et al.
Published: (2016)