Modification of radiation defects in Si and Ge by background impurity

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Datum:2013
1. Verfasser: A. P. Dolgolenko
Format: Artikel
Sprache:English
Veröffentlicht: 2013
Schriftenreihe:Nuclear physics and atomic energy
Online Zugang:http://jnas.nbuv.gov.ua/article/UJRN-0000331958
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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spelling open-sciencenbuvgovua-835952024-04-16T18:33:22Z Modification of radiation defects in Si and Ge by background impurity A. P. Dolgolenko 1818-331X 2013 en Nuclear physics and atomic energy http://jnas.nbuv.gov.ua/article/UJRN-0000331958 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Nuclear physics and atomic energy
spellingShingle Nuclear physics and atomic energy
A. P. Dolgolenko
Modification of radiation defects in Si and Ge by background impurity
format Article
author A. P. Dolgolenko
author_facet A. P. Dolgolenko
author_sort A. P. Dolgolenko
title Modification of radiation defects in Si and Ge by background impurity
title_short Modification of radiation defects in Si and Ge by background impurity
title_full Modification of radiation defects in Si and Ge by background impurity
title_fullStr Modification of radiation defects in Si and Ge by background impurity
title_full_unstemmed Modification of radiation defects in Si and Ge by background impurity
title_sort modification of radiation defects in si and ge by background impurity
publishDate 2013
url http://jnas.nbuv.gov.ua/article/UJRN-0000331958
work_keys_str_mv AT apdolgolenko modificationofradiationdefectsinsiandgebybackgroundimpurity
first_indexed 2025-07-22T10:01:42Z
last_indexed 2025-07-22T10:01:42Z
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