Modification of radiation defects in Si and Ge by background impurity

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Бібліографічні деталі
Дата:2013
Автор: A. P. Dolgolenko
Формат: Стаття
Мова:English
Опубліковано: 2013
Назва видання:Nuclear physics and atomic energy
Онлайн доступ:http://jnas.nbuv.gov.ua/article/UJRN-0000331958
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
id open-sciencenbuvgovua-83595
record_format dspace
spelling open-sciencenbuvgovua-835952024-04-16T18:33:22Z Modification of radiation defects in Si and Ge by background impurity A. P. Dolgolenko 1818-331X 2013 en Nuclear physics and atomic energy http://jnas.nbuv.gov.ua/article/UJRN-0000331958 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Nuclear physics and atomic energy
spellingShingle Nuclear physics and atomic energy
A. P. Dolgolenko
Modification of radiation defects in Si and Ge by background impurity
format Article
author A. P. Dolgolenko
author_facet A. P. Dolgolenko
author_sort A. P. Dolgolenko
title Modification of radiation defects in Si and Ge by background impurity
title_short Modification of radiation defects in Si and Ge by background impurity
title_full Modification of radiation defects in Si and Ge by background impurity
title_fullStr Modification of radiation defects in Si and Ge by background impurity
title_full_unstemmed Modification of radiation defects in Si and Ge by background impurity
title_sort modification of radiation defects in si and ge by background impurity
publishDate 2013
url http://jnas.nbuv.gov.ua/article/UJRN-0000331958
work_keys_str_mv AT apdolgolenko modificationofradiationdefectsinsiandgebybackgroundimpurity
first_indexed 2024-04-17T05:58:45Z
last_indexed 2024-04-17T05:58:45Z
_version_ 1796886000852533248