Properties of the crystalline silicon strained via cavitation impact

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Bibliographic Details
Date:2013
Main Author: R. K. Savkina
Format: Article
Language:English
Published: 2013
Series:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000350490
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Journal Title:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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spelling open-sciencenbuvgovua-837602024-04-16T18:34:11Z Properties of the crystalline silicon strained via cavitation impact R. K. Savkina 1560-8034 2013 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000350490 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Semiconductor Physics, Quantum Electronics and Optoelectronics
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
R. K. Savkina
Properties of the crystalline silicon strained via cavitation impact
format Article
author R. K. Savkina
author_facet R. K. Savkina
author_sort R. K. Savkina
title Properties of the crystalline silicon strained via cavitation impact
title_short Properties of the crystalline silicon strained via cavitation impact
title_full Properties of the crystalline silicon strained via cavitation impact
title_fullStr Properties of the crystalline silicon strained via cavitation impact
title_full_unstemmed Properties of the crystalline silicon strained via cavitation impact
title_sort properties of the crystalline silicon strained via cavitation impact
publishDate 2013
url http://jnas.nbuv.gov.ua/article/UJRN-0000350490
work_keys_str_mv AT rksavkina propertiesofthecrystallinesiliconstrainedviacavitationimpact
first_indexed 2025-07-22T10:04:37Z
last_indexed 2025-07-22T10:04:37Z
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