Properties of the crystalline silicon strained via cavitation impact
Збережено в:
Дата: | 2013 |
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Автор: | |
Формат: | Стаття |
Мова: | English |
Опубліковано: |
2013
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Назва видання: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000350490 |
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Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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open-sciencenbuvgovua-837602024-04-16T18:34:11Z Properties of the crystalline silicon strained via cavitation impact R. K. Savkina 1560-8034 2013 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000350490 Article |
institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
collection |
Open-Science |
language |
English |
series |
Semiconductor Physics, Quantum Electronics and Optoelectronics |
spellingShingle |
Semiconductor Physics, Quantum Electronics and Optoelectronics R. K. Savkina Properties of the crystalline silicon strained via cavitation impact |
format |
Article |
author |
R. K. Savkina |
author_facet |
R. K. Savkina |
author_sort |
R. K. Savkina |
title |
Properties of the crystalline silicon strained via cavitation impact |
title_short |
Properties of the crystalline silicon strained via cavitation impact |
title_full |
Properties of the crystalline silicon strained via cavitation impact |
title_fullStr |
Properties of the crystalline silicon strained via cavitation impact |
title_full_unstemmed |
Properties of the crystalline silicon strained via cavitation impact |
title_sort |
properties of the crystalline silicon strained via cavitation impact |
publishDate |
2013 |
url |
http://jnas.nbuv.gov.ua/article/UJRN-0000350490 |
work_keys_str_mv |
AT rksavkina propertiesofthecrystallinesiliconstrainedviacavitationimpact |
first_indexed |
2024-04-17T05:59:25Z |
last_indexed |
2024-04-17T05:59:25Z |
_version_ |
1796886018082734080 |