Properties of the crystalline silicon strained via cavitation impact

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Datum:2013
1. Verfasser: R. K. Savkina
Format: Artikel
Sprache:Englisch
Veröffentlicht: 2013
Schriftenreihe:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Zugang:http://jnas.nbuv.gov.ua/article/UJRN-0000350490
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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author R. K. Savkina
author_facet R. K. Savkina
author_sort R. K. Savkina
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spelling open-sciencenbuvgovua-837602024-04-16T18:34:11Z Properties of the crystalline silicon strained via cavitation impact R. K. Savkina 1560-8034 2013 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000350490 Article
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
R. K. Savkina
Properties of the crystalline silicon strained via cavitation impact
title Properties of the crystalline silicon strained via cavitation impact
title_full Properties of the crystalline silicon strained via cavitation impact
title_fullStr Properties of the crystalline silicon strained via cavitation impact
title_full_unstemmed Properties of the crystalline silicon strained via cavitation impact
title_short Properties of the crystalline silicon strained via cavitation impact
title_sort properties of the crystalline silicon strained via cavitation impact
url http://jnas.nbuv.gov.ua/article/UJRN-0000350490
work_keys_str_mv AT rksavkina propertiesofthecrystallinesiliconstrainedviacavitationimpact