Features of piezoresistance in heavily doped n-silicon crystals

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Бібліографічні деталі
Дата:2013
Автор: G. P. Gaidar
Формат: Стаття
Мова:Англійська
Опубліковано: 2013
Назва видання:Semiconductor Physics, Quantum Electronics and Optoelectronics
Онлайн доступ:http://jnas.nbuv.gov.ua/article/UJRN-0000350497
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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spelling open-sciencenbuvgovua-837672024-04-16T18:34:15Z Features of piezoresistance in heavily doped n-silicon crystals G. P. Gaidar 1560-8034 2013 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000350497 Article
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
G. P. Gaidar
Features of piezoresistance in heavily doped n-silicon crystals
title Features of piezoresistance in heavily doped n-silicon crystals
title_full Features of piezoresistance in heavily doped n-silicon crystals
title_fullStr Features of piezoresistance in heavily doped n-silicon crystals
title_full_unstemmed Features of piezoresistance in heavily doped n-silicon crystals
title_short Features of piezoresistance in heavily doped n-silicon crystals
title_sort features of piezoresistance in heavily doped n-silicon crystals
url http://jnas.nbuv.gov.ua/article/UJRN-0000350497
work_keys_str_mv AT gpgaidar featuresofpiezoresistanceinheavilydopednsiliconcrystals