Features of piezoresistance in heavily doped n-silicon crystals

Gespeichert in:

Bibliographische Detailangaben
Datum:	2013
1. Verfasser:	G. P. Gaidar
Format:	Artikel
Sprache:	English
Veröffentlicht:	2013
Schriftenreihe:	Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Zugang:	http://jnas.nbuv.gov.ua/article/UJRN-0000350497
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS

id	open-sciencenbuvgovua-83767
record_format	dspace
spelling	open-sciencenbuvgovua-837672024-04-16T18:34:15Z Features of piezoresistance in heavily doped n-silicon crystals G. P. Gaidar 1560-8034 2013 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000350497 Article
institution	Library portal of National Academy of Sciences of Ukraine \| LibNAS
collection	Open-Science
language	English
series	Semiconductor Physics, Quantum Electronics and Optoelectronics
spellingShingle	Semiconductor Physics, Quantum Electronics and Optoelectronics G. P. Gaidar Features of piezoresistance in heavily doped n-silicon crystals
format	Article
author	G. P. Gaidar
author_facet	G. P. Gaidar
author_sort	G. P. Gaidar
title	Features of piezoresistance in heavily doped n-silicon crystals
title_short	Features of piezoresistance in heavily doped n-silicon crystals
title_full	Features of piezoresistance in heavily doped n-silicon crystals
title_fullStr	Features of piezoresistance in heavily doped n-silicon crystals
title_full_unstemmed	Features of piezoresistance in heavily doped n-silicon crystals
title_sort	features of piezoresistance in heavily doped n-silicon crystals
publishDate	2013
url	http://jnas.nbuv.gov.ua/article/UJRN-0000350497
work_keys_str_mv	AT gpgaidar featuresofpiezoresistanceinheavilydopednsiliconcrystals
first_indexed	2025-07-22T10:04:40Z
last_indexed	2025-07-22T10:04:40Z
_version_	1850420138180870144