Features of piezoresistance in heavily doped n-silicon crystals

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Bibliographic Details
Date:	2013
Main Author:	G. P. Gaidar
Format:	Article
Language:	English
Published:	2013
Series:	Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000350497
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Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

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spelling	open-sciencenbuvgovua-837672024-04-16T18:34:15Z Features of piezoresistance in heavily doped n-silicon crystals G. P. Gaidar 1560-8034 2013 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000350497 Article
institution	Library portal of National Academy of Sciences of Ukraine \| LibNAS
collection	Open-Science
language	English
series	Semiconductor Physics, Quantum Electronics and Optoelectronics
spellingShingle	Semiconductor Physics, Quantum Electronics and Optoelectronics G. P. Gaidar Features of piezoresistance in heavily doped n-silicon crystals
format	Article
author	G. P. Gaidar
author_facet	G. P. Gaidar
author_sort	G. P. Gaidar
title	Features of piezoresistance in heavily doped n-silicon crystals
title_short	Features of piezoresistance in heavily doped n-silicon crystals
title_full	Features of piezoresistance in heavily doped n-silicon crystals
title_fullStr	Features of piezoresistance in heavily doped n-silicon crystals
title_full_unstemmed	Features of piezoresistance in heavily doped n-silicon crystals
title_sort	features of piezoresistance in heavily doped n-silicon crystals
publishDate	2013
url	http://jnas.nbuv.gov.ua/article/UJRN-0000350497
work_keys_str_mv	AT gpgaidar featuresofpiezoresistanceinheavilydopednsiliconcrystals
first_indexed	2025-07-22T10:04:40Z
last_indexed	2025-07-22T10:04:40Z
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