Role of dislocations in formation of ohmic contacts to heavily doped n-Si

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Datum:2013
Hauptverfasser: A. E. Belyaev, V. A. Pilipenko, V. M. Anischik, T. V. Petlitskaya, A. V. Sachenko, V. P. Kladko, R. V. Konakova, N. S. Boltovets, T. V. Korostinskaya, L. M. Kapitanchuk
Format: Artikel
Sprache:English
Veröffentlicht: 2013
Schriftenreihe:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Zugang:http://jnas.nbuv.gov.ua/article/UJRN-0000351875
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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spelling open-sciencenbuvgovua-837712024-04-16T18:34:15Z Role of dislocations in formation of ohmic contacts to heavily doped n-Si A. E. Belyaev V. A. Pilipenko V. M. Anischik T. V. Petlitskaya A. V. Sachenko V. P. Kladko R. V. Konakova N. S. Boltovets T. V. Korostinskaya L. M. Kapitanchuk 1560-8034 2013 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000351875 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Semiconductor Physics, Quantum Electronics and Optoelectronics
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
A. E. Belyaev
V. A. Pilipenko
V. M. Anischik
T. V. Petlitskaya
A. V. Sachenko
V. P. Kladko
R. V. Konakova
N. S. Boltovets
T. V. Korostinskaya
L. M. Kapitanchuk
Role of dislocations in formation of ohmic contacts to heavily doped n-Si
format Article
author A. E. Belyaev
V. A. Pilipenko
V. M. Anischik
T. V. Petlitskaya
A. V. Sachenko
V. P. Kladko
R. V. Konakova
N. S. Boltovets
T. V. Korostinskaya
L. M. Kapitanchuk
author_facet A. E. Belyaev
V. A. Pilipenko
V. M. Anischik
T. V. Petlitskaya
A. V. Sachenko
V. P. Kladko
R. V. Konakova
N. S. Boltovets
T. V. Korostinskaya
L. M. Kapitanchuk
author_sort A. E. Belyaev
title Role of dislocations in formation of ohmic contacts to heavily doped n-Si
title_short Role of dislocations in formation of ohmic contacts to heavily doped n-Si
title_full Role of dislocations in formation of ohmic contacts to heavily doped n-Si
title_fullStr Role of dislocations in formation of ohmic contacts to heavily doped n-Si
title_full_unstemmed Role of dislocations in formation of ohmic contacts to heavily doped n-Si
title_sort role of dislocations in formation of ohmic contacts to heavily doped n-si
publishDate 2013
url http://jnas.nbuv.gov.ua/article/UJRN-0000351875
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AT nsboltovets roleofdislocationsinformationofohmiccontactstoheavilydopednsi
AT tvkorostinskaya roleofdislocationsinformationofohmiccontactstoheavilydopednsi
AT lmkapitanchuk roleofdislocationsinformationofohmiccontactstoheavilydopednsi
first_indexed 2025-07-22T10:04:42Z
last_indexed 2025-07-22T10:04:42Z
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