2025-02-23T11:00:28-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22open-sciencenbuvgovua-83771%22&qt=morelikethis&rows=5
2025-02-23T11:00:28-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22open-sciencenbuvgovua-83771%22&qt=morelikethis&rows=5
2025-02-23T11:00:28-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T11:00:28-05:00 DEBUG: Deserialized SOLR response
Role of dislocations in formation of ohmic contacts to heavily doped n-Si

Role of dislocations in formation of ohmic contacts to heavily doped n-Si

Saved in:
Bibliographic Details
Main Authors: A. E. Belyaev, V. A. Pilipenko, V. M. Anischik, T. V. Petlitskaya, A. V. Sachenko, V. P. Kladko, R. V. Konakova, N. S. Boltovets, T. V. Korostinskaya, L. M. Kapitanchuk
Format: Article
Language:English
Published: 2013
Series:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000351875
Tags: Add Tag
No Tags, Be the first to tag this record!
id open-sciencenbuvgovua-83771
record_format dspace
spelling open-sciencenbuvgovua-837712024-04-16T18:34:15Z Role of dislocations in formation of ohmic contacts to heavily doped n-Si A. E. Belyaev V. A. Pilipenko V. M. Anischik T. V. Petlitskaya A. V. Sachenko V. P. Kladko R. V. Konakova N. S. Boltovets T. V. Korostinskaya L. M. Kapitanchuk 1560-8034 2013 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000351875 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Semiconductor Physics, Quantum Electronics and Optoelectronics
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
A. E. Belyaev
V. A. Pilipenko
V. M. Anischik
T. V. Petlitskaya
A. V. Sachenko
V. P. Kladko
R. V. Konakova
N. S. Boltovets
T. V. Korostinskaya
L. M. Kapitanchuk
Role of dislocations in formation of ohmic contacts to heavily doped n-Si
format Article
author A. E. Belyaev
V. A. Pilipenko
V. M. Anischik
T. V. Petlitskaya
A. V. Sachenko
V. P. Kladko
R. V. Konakova
N. S. Boltovets
T. V. Korostinskaya
L. M. Kapitanchuk
author_facet A. E. Belyaev
V. A. Pilipenko
V. M. Anischik
T. V. Petlitskaya
A. V. Sachenko
V. P. Kladko
R. V. Konakova
N. S. Boltovets
T. V. Korostinskaya
L. M. Kapitanchuk
author_sort A. E. Belyaev
title Role of dislocations in formation of ohmic contacts to heavily doped n-Si
title_short Role of dislocations in formation of ohmic contacts to heavily doped n-Si
title_full Role of dislocations in formation of ohmic contacts to heavily doped n-Si
title_fullStr Role of dislocations in formation of ohmic contacts to heavily doped n-Si
title_full_unstemmed Role of dislocations in formation of ohmic contacts to heavily doped n-Si
title_sort role of dislocations in formation of ohmic contacts to heavily doped n-si
publishDate 2013
url http://jnas.nbuv.gov.ua/article/UJRN-0000351875
work_keys_str_mv AT aebelyaev roleofdislocationsinformationofohmiccontactstoheavilydopednsi
AT vapilipenko roleofdislocationsinformationofohmiccontactstoheavilydopednsi
AT vmanischik roleofdislocationsinformationofohmiccontactstoheavilydopednsi
AT tvpetlitskaya roleofdislocationsinformationofohmiccontactstoheavilydopednsi
AT avsachenko roleofdislocationsinformationofohmiccontactstoheavilydopednsi
AT vpkladko roleofdislocationsinformationofohmiccontactstoheavilydopednsi
AT rvkonakova roleofdislocationsinformationofohmiccontactstoheavilydopednsi
AT nsboltovets roleofdislocationsinformationofohmiccontactstoheavilydopednsi
AT tvkorostinskaya roleofdislocationsinformationofohmiccontactstoheavilydopednsi
AT lmkapitanchuk roleofdislocationsinformationofohmiccontactstoheavilydopednsi
first_indexed 2024-04-17T05:59:28Z
last_indexed 2024-04-17T05:59:28Z
_version_ 1796886019229876224

Similar Items