Role of dislocations in formation of ohmic contacts to heavily doped n-Si
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| Дата: | 2013 |
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| Автори: | , , , , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
2013
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| Назва видання: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000351875 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Library portal of National Academy of Sciences of Ukraine | LibNAS| id |
open-sciencenbuvgovua-83771 |
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open-sciencenbuvgovua-837712024-04-16T18:34:15Z Role of dislocations in formation of ohmic contacts to heavily doped n-Si A. E. Belyaev V. A. Pilipenko V. M. Anischik T. V. Petlitskaya A. V. Sachenko V. P. Kladko R. V. Konakova N. S. Boltovets T. V. Korostinskaya L. M. Kapitanchuk 1560-8034 2013 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000351875 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spellingShingle |
Semiconductor Physics, Quantum Electronics and Optoelectronics A. E. Belyaev V. A. Pilipenko V. M. Anischik T. V. Petlitskaya A. V. Sachenko V. P. Kladko R. V. Konakova N. S. Boltovets T. V. Korostinskaya L. M. Kapitanchuk Role of dislocations in formation of ohmic contacts to heavily doped n-Si |
| format |
Article |
| author |
A. E. Belyaev V. A. Pilipenko V. M. Anischik T. V. Petlitskaya A. V. Sachenko V. P. Kladko R. V. Konakova N. S. Boltovets T. V. Korostinskaya L. M. Kapitanchuk |
| author_facet |
A. E. Belyaev V. A. Pilipenko V. M. Anischik T. V. Petlitskaya A. V. Sachenko V. P. Kladko R. V. Konakova N. S. Boltovets T. V. Korostinskaya L. M. Kapitanchuk |
| author_sort |
A. E. Belyaev |
| title |
Role of dislocations in formation of ohmic contacts to heavily doped n-Si |
| title_short |
Role of dislocations in formation of ohmic contacts to heavily doped n-Si |
| title_full |
Role of dislocations in formation of ohmic contacts to heavily doped n-Si |
| title_fullStr |
Role of dislocations in formation of ohmic contacts to heavily doped n-Si |
| title_full_unstemmed |
Role of dislocations in formation of ohmic contacts to heavily doped n-Si |
| title_sort |
role of dislocations in formation of ohmic contacts to heavily doped n-si |
| publishDate |
2013 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0000351875 |
| work_keys_str_mv |
AT aebelyaev roleofdislocationsinformationofohmiccontactstoheavilydopednsi AT vapilipenko roleofdislocationsinformationofohmiccontactstoheavilydopednsi AT vmanischik roleofdislocationsinformationofohmiccontactstoheavilydopednsi AT tvpetlitskaya roleofdislocationsinformationofohmiccontactstoheavilydopednsi AT avsachenko roleofdislocationsinformationofohmiccontactstoheavilydopednsi AT vpkladko roleofdislocationsinformationofohmiccontactstoheavilydopednsi AT rvkonakova roleofdislocationsinformationofohmiccontactstoheavilydopednsi AT nsboltovets roleofdislocationsinformationofohmiccontactstoheavilydopednsi AT tvkorostinskaya roleofdislocationsinformationofohmiccontactstoheavilydopednsi AT lmkapitanchuk roleofdislocationsinformationofohmiccontactstoheavilydopednsi |
| first_indexed |
2024-04-17T05:59:28Z |
| last_indexed |
2024-04-17T05:59:28Z |
| _version_ |
1796886019229876224 |