Role of dislocations in formation of ohmic contacts to heavily doped n-Si - A. E. Belyaev; V. A. Pilipenko; V. M. Anischik; T. V. Petlitskaya; A. V. Sachenko; V. P. Kladko; R. V. Konakova; N. S. Boltovets; T. V. Korostinskaya; L. M. Kapitanchuk (Semiconductor Physics, Quantum Electronics and Optoelectronics, 2013)