Cover Image

Role of dislocations in formation of ohmic contacts to heavily doped n-Si

Saved in:

Bibliographic Details
Date:	2013
Main Authors:	A. E. Belyaev, V. A. Pilipenko, V. M. Anischik, T. V. Petlitskaya, A. V. Sachenko, V. P. Kladko, R. V. Konakova, N. S. Boltovets, T. V. Korostinskaya, L. M. Kapitanchuk
Format:	Article
Language:	English
Published:	2013
Series:	Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000351875
Tags:	Add Tag No Tags, Be the first to tag this record!
Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS

Similar Items

On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step
by: A. V. Sachenko, et al.
Published: (2014)

Mechanisms of contact resistance formation in ohmic contacts with high dislocation density (review)
by: A. V. Sachenko, et al.
Published: (2013)

Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts
by: Belyaev, A.E., et al.
Published: (2010)

Temperature dependence of contact resistance of Au Ti Pd2Si n+-Si ohmic contacts
by: A. E. Belyaev, et al.
Published: (2010)

The features of temperature dependence of contact resistivity of Au Ti Pd2Si p+-Si ohmic contacts
by: A. E. Belyaev, et al.
Published: (2010)

Physical mechanisms providing formation of ohmic contacts metal-semiconductor (Review)
by: A. V. Sachenko, et al.
Published: (2018)

Ohmic contacts based on Pd to indium phosphide Gunn diodes
by: A. E. Belyaev, et al.
Published: (2015)

Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+-GaN ohmic contacts
by: A. V. Sachenko, et al.
Published: (2013)

Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n+-n-n+-Si in IMPATT diodes
by: P. M. Romanets, et al.
Published: (2016)

Method for data processing in application to ohmic contacts
by: A. E. Belyaev, et al.
Published: (2019)

Effect of microwave radiation on I V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
by: A. E. Belyaev, et al.
Published: (2013)

Structural and electrical-physical properties of the ohmic contacts based on palladium to n+-n-n++-n+++-InP
by: A. E. Belyaev, et al.
Published: (2015)

Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity
by: Boltovets, M.S., et al.
Published: (2010)

Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity
by: M. S. Boltovets, et al.
Published: (2010)

Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures
by: Belyaev, A.E., et al.
Published: (2008)

Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density
by: A. V. Sachenko, et al.
Published: (2012)

Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP
by: Belyaev, A.E., et al.
Published: (2015)

Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density
by: Sachenko, A.V., et al.
Published: (2012)

Investigation of contact resistivity for Au—Ti—Pd—n-Si ohmic contacts for impatt diodes
by: V. V. Basanets, et al.
Published: (2015)

Negative magnetoresistance of heavily doped silicon p-n junction
by: V. L. Borblik, et al.
Published: (2011)

Features of the formation of ohmic contacts to n+-InN
by: P. O. Sai, et al.
Published: (2019)

Features of the formation of ohmic contacts to n+-InN
by: P. O. Sai, et al.
Published: (2019)

Features of piezoresistance in heavily doped n-silicon crystals
by: G. P. Gaidar
Published: (2013)

Revealing the hopping mechanism of conduction in heavily doped silicon diodes
by: Borblik, V. L., et al.
Published: (2005)

Influence of gettering on aluminum ohmic contact formation
by: V. N. Litvinenko, et al.
Published: (2020)

Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures
by: Konakova, R.V., et al.
Published: (2002)

Heterostructure ohmic contacts to p-CdTe polycrystalline films
by: A. V. Sukach, et al.
Published: (2014)

Ohmic contacts to InN-based materials
by: Sai, P.O.
Published: (2016)

Ohmic contacts to InN-based materials
by: P. O. Sai
Published: (2016)

Peculiarities of diffusion thermopower with impurity electron topological transition in heavily doped bismuth wires
by: A. A. Nikolaeva, et al.
Published: (2014)

Metrological aspects of studying the specific contact resistivity of ohmic contacts by using the four-contact method
by: V. N. Sheremet
Published: (2014)

Low temperature thermal conductivity of heavily boron-doped synthetic diamond: Influence of boron-related structure defects
by: Prikhodko, D., et al.
Published: (2019)

Low temperature thermal conductivity of heavily boron-doped synthetic diamond: Influence of boron-related structure defects
by: D. Prikhodko, et al.
Published: (2019)

Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments
by: D. V. Savchenko, et al.
Published: (2018)

Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures
by: Zhuchenko, Z.Ya., et al.
Published: (1999)

Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings
by: Gaidar, G.P.
Published: (2015)

Methods for creation and properties of ohmic contacts to indium phosphide (rewiev)
by: Ya. Ya. Kudryk
Published: (2015)

Effect of microwave treatment on current flow mechanism ohmic contacts to GaN
by: V. N. Sheremet
Published: (2013)

New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures
by: V. L. Borblik, et al.
Published: (2017)

Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes
by: Ya. Ya. Kudryk, et al.
Published: (2019)