Role of dislocations in formation of ohmic contacts to heavily doped n-Si

Role of dislocations in formation of ohmic contacts to heavily doped n-Si

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Bibliographische Detailangaben
Datum:	2013
Hauptverfasser:	A. E. Belyaev, V. A. Pilipenko, V. M. Anischik, T. V. Petlitskaya, A. V. Sachenko, V. P. Kladko, R. V. Konakova, N. S. Boltovets, T. V. Korostinskaya, L. M. Kapitanchuk
Format:	Artikel
Sprache:	English
Veröffentlicht:	2013
Schriftenreihe:	Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Zugang:	http://jnas.nbuv.gov.ua/article/UJRN-0000351875
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Назва журналу:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

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