$X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates$

X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates

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Бібліографічні деталі
Дата:	2013
Автори:	N. V. Safriuk, G. V. Stanchu, A. V. Kuchuk, V. P. Kladko, A. E. Belyaev, V. F. Machulin
Формат:	Стаття
Мова:	English
Опубліковано:	2013
Назва видання:	Semiconductor Physics, Quantum Electronics and Optoelectronics
Онлайн доступ:	http://jnas.nbuv.gov.ua/article/UJRN-0000352311
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Назва журналу:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

id	open-sciencenbuvgovua-83816
record_format	dspace
spelling	open-sciencenbuvgovua-838162024-04-16T18:34:42Z X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates N. V. Safriuk G. V. Stanchu A. V. Kuchuk V. P. Kladko A. E. Belyaev V. F. Machulin 1560-8034 2013 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000352311 Article
institution	Library portal of National Academy of Sciences of Ukraine \| LibNAS
collection	Open-Science
language	English
series	Semiconductor Physics, Quantum Electronics and Optoelectronics
spellingShingle	Semiconductor Physics, Quantum Electronics and Optoelectronics N. V. Safriuk G. V. Stanchu A. V. Kuchuk V. P. Kladko A. E. Belyaev V. F. Machulin X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates
format	Article
author	N. V. Safriuk G. V. Stanchu A. V. Kuchuk V. P. Kladko A. E. Belyaev V. F. Machulin
author_facet	N. V. Safriuk G. V. Stanchu A. V. Kuchuk V. P. Kladko A. E. Belyaev V. F. Machulin
author_sort	N. V. Safriuk
title	X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates
title_short	X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates
title_full	X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates
title_fullStr	X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates
title_full_unstemmed	X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates
title_sort	x-ray diffraction investigation of gan layers on si(111) and al2o3(0001) substrates
publishDate	2013
url	http://jnas.nbuv.gov.ua/article/UJRN-0000352311
work_keys_str_mv	AT nvsafriuk xraydiffractioninvestigationofganlayersonsi111andal2o30001substrates AT gvstanchu xraydiffractioninvestigationofganlayersonsi111andal2o30001substrates AT avkuchuk xraydiffractioninvestigationofganlayersonsi111andal2o30001substrates AT vpkladko xraydiffractioninvestigationofganlayersonsi111andal2o30001substrates AT aebelyaev xraydiffractioninvestigationofganlayersonsi111andal2o30001substrates AT vfmachulin xraydiffractioninvestigationofganlayersonsi111andal2o30001substrates
first_indexed	2024-04-17T05:59:38Z
last_indexed	2024-04-17T05:59:38Z
_version_	1796886023933788160

X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates

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