X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates

X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates

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Bibliographic Details
Date:2013
Main Authors: N. V. Safriuk, G. V. Stanchu, A. V. Kuchuk, V. P. Kladko, A. E. Belyaev, V. F. Machulin
Format: Article
Language:English
Published: 2013
Series:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000352311
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Journal Title:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
id open-sciencenbuvgovua-83816
record_format dspace
spelling open-sciencenbuvgovua-838162024-04-16T18:34:42Z X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates N. V. Safriuk G. V. Stanchu A. V. Kuchuk V. P. Kladko A. E. Belyaev V. F. Machulin 1560-8034 2013 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000352311 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Semiconductor Physics, Quantum Electronics and Optoelectronics
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
N. V. Safriuk
G. V. Stanchu
A. V. Kuchuk
V. P. Kladko
A. E. Belyaev
V. F. Machulin
X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates
format Article
author N. V. Safriuk
G. V. Stanchu
A. V. Kuchuk
V. P. Kladko
A. E. Belyaev
V. F. Machulin
author_facet N. V. Safriuk
G. V. Stanchu
A. V. Kuchuk
V. P. Kladko
A. E. Belyaev
V. F. Machulin
author_sort N. V. Safriuk
title X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates
title_short X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates
title_full X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates
title_fullStr X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates
title_full_unstemmed X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates
title_sort x-ray diffraction investigation of gan layers on si(111) and al2o3(0001) substrates
publishDate 2013
url http://jnas.nbuv.gov.ua/article/UJRN-0000352311
work_keys_str_mv AT nvsafriuk xraydiffractioninvestigationofganlayersonsi111andal2o30001substrates
AT gvstanchu xraydiffractioninvestigationofganlayersonsi111andal2o30001substrates
AT avkuchuk xraydiffractioninvestigationofganlayersonsi111andal2o30001substrates
AT vpkladko xraydiffractioninvestigationofganlayersonsi111andal2o30001substrates
AT aebelyaev xraydiffractioninvestigationofganlayersonsi111andal2o30001substrates
AT vfmachulin xraydiffractioninvestigationofganlayersonsi111andal2o30001substrates
first_indexed 2025-07-22T10:06:05Z
last_indexed 2025-07-22T10:06:05Z
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