Cover Image

Nanostructured antidiffusion layers in contacts to wide-gap semiconductors

Saved in:

Bibliographic Details
Date:	2013
Main Author:	Ja. Ja. Kudrik
Format:	Article
Language:	English
Published:	2013
Series:	Technology and design in electronic equipment
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000405168
Tags:	Add Tag No Tags, Be the first to tag this record!
Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS

Similar Items

On origin of room temperature ferromagnetism in wide gap semiconductors
by: Korbecka, Anna, et al.
Published: (2009)

Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film
by: O. B. Okhrimenko
Published: (2015)

Manufacturing technology for contacts to silicon carbide
by: Ja. Ja. Kudrik, et al.
Published: (2013)

Investigation of contact resistivity for Au—Ti—Pd—n-Si ohmic contacts for impatt diodes
by: V. V. Basanets, et al.
Published: (2015)

Low-temperature radiation effects in wide gap materials
by: A. I. Popov, et al.
Published: (2016)

Low-temperature radiation effects in wide gap materials
by: Popov, A.I., et al.
Published: (2016)

High conducting transparent materials based on wide-gap ZnO
by: G. V. Lashkarev, et al.
Published: (2017)

Radiation and thermal stability of thin layers, he-terosystems and nanostructures, created on the basis of elementary semiconductors and semiconductor com-pounds
by: P. I. Baranskyi, et al.
Published: (2010)

Superlattice nanostructures based on chalcogenide semiconductors
by: Sipatov
Published: (2009)

Metal site doping in the narrow-gap semiconductor FeGa3
by: B. Kotur, et al.
Published: (2013)

Uncooled wide-range spectral optoelectronic devices on the base of HgCdTe semiconductor
by: F. Sizov
Published: (2015)

Uncooled wide-range spectral optoelectronic devices on the base of HgCdTe semiconductor
by: F. Sizov
Published: (2015)

Development of methods for elimination of distortions of crankshafts in wide-layer surfacing
by: Ju. Krivchikov
Published: (2011)

Technology of wide-layer hard-facing of large-sized crankshafts
by: A. P. Zhudra, et al.
Published: (2010)

Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As
by: Figielski, T., et al.
Published: (2003)

Formation of rectifying contact in semiconductor–vacuum–metal system
by: L. G. Ilchenko, et al.
Published: (2011)

Formation and properties of intercalatal nanostructures of an inorganic semiconductor/ferroelectric liquid crystal
by: T. M. Bishchaniuk, et al.
Published: (2013)

Imation of the electrical and thermal contact rsistances and thermoemf of &quot;thermoelectric material-metal&quot; transient contact layer due to semiconductor surface roughness
by: P. V. Horskyi
Published: (2018)

Imation of the electrical and thermal contact rsistances and thermoemf of &quot;thermoelectric material-metal&quot; transient contact layer due to semiconductor surface roughness
by: P. V. Gorskij
Published: (2018)

Semiconductor properties of nanomolekular layer of DNA
by: V. V. Dzhelali, et al.
Published: (2007)

Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors
by: Slipokurov, V.S., et al.
Published: (2015)

Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors
by: V. S. Slipokurov, et al.
Published: (2015)

Variational approach to the calculation of the lowest Wannier exciton state in wide type-II single semiconductor quantum wells
by: G. V. Vertsimakha
Published: (2016)

Functionalization and nanostructurization of surface layers of porous silicon
by: Ye. I. Zubko
Published: (2013)

Band gap change of bulk ZnSxSe1 – x semiconductors by controlling the sulfur content
by: O. G. Trubaieva, et al.
Published: (2018)

Band gap change of bulk ZnSxSe1 – x semiconductors by controlling the sulfur content
by: O. G. Trubaieva, et al.
Published: (2018)

Photoelectric phenomena in the hyperfine (3-20 μm) gap gas discharge with a semiconductor electrode
by: Z. Khajdarov, et al.
Published: (2015)

Features studies of transition layers in semiconductor heterosystems
by: L. V. Shekhovtsov, et al.
Published: (2021)

Physical mechanisms providing formation of ohmic contacts metal-semiconductor (Review)
by: A. V. Sachenko, et al.
Published: (2018)

Contact of elastic solids in the presence of gas and non-wetting liquid in periodically arranged interfacial gaps
by: O. P. Kozachok, et al.
Published: (2015)

Determination of parameters of shock-compressed gas in welding gap ahead of contact point in explosion cladding
by: Ju. Bondarenko, et al.
Published: (2009)

Cold cathodes based on carbonic nanostructured layered structures
by: A. F. Beljanin, et al.
Published: (2013)

Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese
by: T. Charikova, et al.
Published: (2015)

Contact fatigue of 20KhN3A steel with surface nanostructure
by: V. I. Kyryliv, et al.
Published: (2015)

Methods for deter-mination of schottky barrier height from I-V curves (review)
by: Ja. Ja. Kudrik, et al.
Published: (2014)

Contact between two elastic solids with a wavy relief in the presence of a real gas in gaps
by: O. P. Kozachok, et al.
Published: (2018)

The effect of an ideal gas in interfacial gaps on the contact between two elastic bodies with wavy surface relief
by: O. P. Kozachok, et al.
Published: (2015)

Phonon transfer of energy in nanostructures comprising two metal layers
by: A. I. Bezuglyj
Published: (2015)

Adjustment of superconductivity and ferromagnetism in the few-layered ferromagnet–superconductor nanostructures
by: Izyumov, Y.A., et al.
Published: (2006)

Optical recording of information pits in thin layers of chalcogenide semiconductors
by: Morozovska, A.N., et al.
Published: (2004)