Obtaining of bilateral high voltage epitaxial p—i—n Si structures by LPE method
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| Дата: | 2013 |
|---|---|
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
2013
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| Назва видання: | Technology and design in electronic equipment |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000405174 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Репозитарії
Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859539258976501760 |
|---|---|
| author | N. M. Vakiv S. I. Krukovskij V. R. Timchishin A. P. Vaskiv |
| author_facet | N. M. Vakiv S. I. Krukovskij V. R. Timchishin A. P. Vaskiv |
| author_sort | N. M. Vakiv |
| collection | Open-Science |
| first_indexed | 2025-07-22T10:20:31Z |
| format | Article |
| id | open-sciencenbuvgovua-84530 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-22T10:20:31Z |
| publishDate | 2013 |
| record_format | dspace |
| series | Technology and design in electronic equipment |
| spelling | open-sciencenbuvgovua-845302024-04-16T18:39:21Z Obtaining of bilateral high voltage epitaxial p—i—n Si structures by LPE method N. M. Vakiv S. I. Krukovskij V. R. Timchishin A. P. Vaskiv 2225-5818 2013 en Technology and design in electronic equipment http://jnas.nbuv.gov.ua/article/UJRN-0000405174 Article |
| spellingShingle | Technology and design in electronic equipment N. M. Vakiv S. I. Krukovskij V. R. Timchishin A. P. Vaskiv Obtaining of bilateral high voltage epitaxial p—i—n Si structures by LPE method |
| title | Obtaining of bilateral high voltage epitaxial p—i—n Si structures by LPE method |
| title_full | Obtaining of bilateral high voltage epitaxial p—i—n Si structures by LPE method |
| title_fullStr | Obtaining of bilateral high voltage epitaxial p—i—n Si structures by LPE method |
| title_full_unstemmed | Obtaining of bilateral high voltage epitaxial p—i—n Si structures by LPE method |
| title_short | Obtaining of bilateral high voltage epitaxial p—i—n Si structures by LPE method |
| title_sort | obtaining of bilateral high voltage epitaxial p—i—n si structures by lpe method |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000405174 |
| work_keys_str_mv | AT nmvakiv obtainingofbilateralhighvoltageepitaxialpinsistructuresbylpemethod AT sikrukovskij obtainingofbilateralhighvoltageepitaxialpinsistructuresbylpemethod AT vrtimchishin obtainingofbilateralhighvoltageepitaxialpinsistructuresbylpemethod AT apvaskiv obtainingofbilateralhighvoltageepitaxialpinsistructuresbylpemethod |