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Obtaining of bilateral high voltage epitaxial p—i—n Si structures by LPE method

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Bibliographic Details
Date:	2013
Main Authors:	N. M. Vakiv, S. I. Krukovskij, V. R. Timchishin, A. P. Vaskiv
Format:	Article
Language:	English
Published:	2013
Series:	Technology and design in electronic equipment
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000405174
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Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

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