Obtaining of bilateral high voltage epitaxial p—i—n Si structures by LPE method
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| Date: | 2013 |
|---|---|
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
2013
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| Series: | Technology and design in electronic equipment |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000405174 |
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| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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