Obtaining porous silicon suitable for sensor technology using MacEtch nonelectrolytic etching

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Datum:2013
1. Verfasser: I. R. Jatsunskij
Format: Artikel
Sprache:Englisch
Veröffentlicht: 2013
Schriftenreihe:Technology and design in electronic equipment
Online Zugang:http://jnas.nbuv.gov.ua/article/UJRN-0000405176
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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author I. R. Jatsunskij
author_facet I. R. Jatsunskij
author_sort I. R. Jatsunskij
collection Open-Science
first_indexed 2025-07-22T10:20:32Z
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institution Library portal of National Academy of Sciences of Ukraine | LibNAS
language English
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publishDate 2013
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series Technology and design in electronic equipment
spelling open-sciencenbuvgovua-845322024-04-16T18:39:21Z Obtaining porous silicon suitable for sensor technology using MacEtch nonelectrolytic etching I. R. Jatsunskij 2225-5818 2013 en Technology and design in electronic equipment http://jnas.nbuv.gov.ua/article/UJRN-0000405176 Article
spellingShingle Technology and design in electronic equipment
I. R. Jatsunskij
Obtaining porous silicon suitable for sensor technology using MacEtch nonelectrolytic etching
title Obtaining porous silicon suitable for sensor technology using MacEtch nonelectrolytic etching
title_full Obtaining porous silicon suitable for sensor technology using MacEtch nonelectrolytic etching
title_fullStr Obtaining porous silicon suitable for sensor technology using MacEtch nonelectrolytic etching
title_full_unstemmed Obtaining porous silicon suitable for sensor technology using MacEtch nonelectrolytic etching
title_short Obtaining porous silicon suitable for sensor technology using MacEtch nonelectrolytic etching
title_sort obtaining porous silicon suitable for sensor technology using macetch nonelectrolytic etching
url http://jnas.nbuv.gov.ua/article/UJRN-0000405176
work_keys_str_mv AT irjatsunskij obtainingporoussiliconsuitableforsensortechnologyusingmacetchnonelectrolyticetching