Temperature dependence of band width of delocalized states for n-InGaAs/GaAs in the quantum Hall effect regime
Saved in:
| Date: | 2013 |
|---|---|
| Main Authors: | Ju. G. Arapov, S. V. Gudina, V. N. Neverov, S. G. Novokshonov, A. S. Klepikova, G. I. Kharus, N. G. Shelushinina, M. V. Jakunin |
| Format: | Article |
| Language: | English |
| Published: |
2013
|
| Series: | Low Temperature Physics |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000476649 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
-
Plateau–plateau transitions in the quantum Hall regime for a single quantum well heterostructure n-InGaAs/GaAs before and after IR illumination
by: Ju. G. Arapov, et al.
Published: (2015) -
Insulator–quantum Hall transition in n-InGaAs/GaAs heterostructures
by: A. P. Savelev, et al.
Published: (2017) -
Temperature dependence of quantum lifetime in n-InGaAs/GaAs structures with double stronglycoupled quantum wells
by: Ju. G. Arapov, et al.
Published: (2013) -
The effect of infrared illumination on quantum magnetotransport in strongly coupled n-InGaAs/GaAs double quantum wells
by: S. V. Gudina, et al.
Published: (2013) -
Quantum magnetotransport in n-InGaAs/GaAs structures under change of electron density by infrared illumination
by: Ju. G. Arapov, et al.
Published: (2015)