Charge Transport in MoRe—Si(W)—MoRe Heterostructures under Various Levels of Semiconductor Layer Alloying

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Бібліографічні деталі
Дата:2013
Автор: A. P. Shapovalov
Формат: Стаття
Мова:Англійська
Опубліковано: 2013
Назва видання:Metallophysics and advanced technologies
Онлайн доступ:http://jnas.nbuv.gov.ua/article/UJRN-0000518648
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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spelling open-sciencenbuvgovua-858472024-04-16T18:48:16Z Charge Transport in MoRe—Si(W)—MoRe Heterostructures under Various Levels of Semiconductor Layer Alloying A. P. Shapovalov 1024-1809 2013 en Metallophysics and advanced technologies http://jnas.nbuv.gov.ua/article/UJRN-0000518648 Article
spellingShingle Metallophysics and advanced technologies
A. P. Shapovalov
Charge Transport in MoRe—Si(W)—MoRe Heterostructures under Various Levels of Semiconductor Layer Alloying
title Charge Transport in MoRe—Si(W)—MoRe Heterostructures under Various Levels of Semiconductor Layer Alloying
title_full Charge Transport in MoRe—Si(W)—MoRe Heterostructures under Various Levels of Semiconductor Layer Alloying
title_fullStr Charge Transport in MoRe—Si(W)—MoRe Heterostructures under Various Levels of Semiconductor Layer Alloying
title_full_unstemmed Charge Transport in MoRe—Si(W)—MoRe Heterostructures under Various Levels of Semiconductor Layer Alloying
title_short Charge Transport in MoRe—Si(W)—MoRe Heterostructures under Various Levels of Semiconductor Layer Alloying
title_sort charge transport in more—si(w)—more heterostructures under various levels of semiconductor layer alloying
url http://jnas.nbuv.gov.ua/article/UJRN-0000518648
work_keys_str_mv AT apshapovalov chargetransportinmoresiwmoreheterostructuresundervariouslevelsofsemiconductorlayeralloying