Electrical and high-frequency properties of compensated GaN under electron streaming conditions
Saved in:
| Date: | 2013 |
|---|---|
| Main Authors: | G. I. Syngayivska, V. V. Korotyeyev |
| Format: | Article |
| Language: | English |
| Published: |
2013
|
| Series: | Ukrainian journal of physics |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000688087 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
-
Electrical and high-frequency properties of compensated GaN under electron streaming conditions
by: H. I. Synhaivska, et al.
Published: (2013) -
Electron transport in crossed electric and magnetic fields under the condition of the electron streaming in GaN
by: Syngayivska, G.I., et al.
Published: (2015) -
Elecron transport in crossed electric and magnetic fields under the condition of the electron streaming in GaN
by: G. I. Syngayivska, et al.
Published: (2015) -
Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields
by: Syngaivska, G.I., et al.
Published: (2007) -
Comparison of electron transport in polar materials for the models of low-density and high-density electron gas. Application to bulk GaN
by: Korotyeyev, V.V., et al.
Published: (2009)