Behavior of hydrogen during crystallization of thin silicon films doped with tin
Збережено в:
Дата: | 2013 |
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Автори: | , , , , , , , , , |
Формат: | Стаття |
Мова: | English |
Опубліковано: |
2013
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Назва видання: | Ukrainian Journal of Physics |
Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000725625 |
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Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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open-sciencenbuvgovua-874072024-04-16T18:58:08Z Behavior of hydrogen during crystallization of thin silicon films doped with tin R. M. Rudenko M. M. Krasko V. V. Voitovych A. H. Kolosiuk Yu. Povarchuk A. M. Kraichynskyi V. O. Yukhymchuk M. V. Voitovych Ya. Bratus I. A. Zaloilo 0372-400X 2013 en Ukrainian Journal of Physics http://jnas.nbuv.gov.ua/article/UJRN-0000725625 Article |
institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
collection |
Open-Science |
language |
English |
series |
Ukrainian Journal of Physics |
spellingShingle |
Ukrainian Journal of Physics R. M. Rudenko M. M. Krasko V. V. Voitovych A. H. Kolosiuk Yu. Povarchuk A. M. Kraichynskyi V. O. Yukhymchuk M. V. Voitovych Ya. Bratus I. A. Zaloilo Behavior of hydrogen during crystallization of thin silicon films doped with tin |
format |
Article |
author |
R. M. Rudenko M. M. Krasko V. V. Voitovych A. H. Kolosiuk Yu. Povarchuk A. M. Kraichynskyi V. O. Yukhymchuk M. V. Voitovych Ya. Bratus I. A. Zaloilo |
author_facet |
R. M. Rudenko M. M. Krasko V. V. Voitovych A. H. Kolosiuk Yu. Povarchuk A. M. Kraichynskyi V. O. Yukhymchuk M. V. Voitovych Ya. Bratus I. A. Zaloilo |
author_sort |
R. M. Rudenko |
title |
Behavior of hydrogen during crystallization of thin silicon films doped with tin |
title_short |
Behavior of hydrogen during crystallization of thin silicon films doped with tin |
title_full |
Behavior of hydrogen during crystallization of thin silicon films doped with tin |
title_fullStr |
Behavior of hydrogen during crystallization of thin silicon films doped with tin |
title_full_unstemmed |
Behavior of hydrogen during crystallization of thin silicon films doped with tin |
title_sort |
behavior of hydrogen during crystallization of thin silicon films doped with tin |
publishDate |
2013 |
url |
http://jnas.nbuv.gov.ua/article/UJRN-0000725625 |
work_keys_str_mv |
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first_indexed |
2024-04-17T06:14:39Z |
last_indexed |
2024-04-17T06:14:39Z |
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