Investigation of the modulation processes of the base area of the silicon p+p-n+-structure
Saved in:
| Date: | 2013 |
|---|---|
| Main Authors: | D. M. Jodgorova, A. V. Karimov, A. A. Karimov |
| Format: | Article |
| Language: | English |
| Published: |
2013
|
| Series: | Physical surface engineering |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000928058 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
-
Investigation of transient processes in a silicon p+pn+ structure
by: O. A. Abdulkhaev, et al.
Published: (2011) -
Analysis of transient processes in irradiated silicon p+nn+structures
by: A. Z. Rakhmatov, et al.
Published: (2012) -
Modeling of thermal processes ohigh-frequency silicon p-i-n-diode
by: A. V. Karimov, et al.
Published: (2014) -
Influence of neutron irradiation on the modulation processes of the base region of the silicon p+nn+-structure
by: A. Z. Rakhmatov
Published: (2013) -
The technology of obtaining and studying heterostructural solar cells based on n-CdS/p-CdTe
by: Sh. B. Karimov, et al.
Published: (2015)