Investigation of electrical and photovoltaic properties In-CdSxTe1-x-Si-In structure

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Бібліографічні деталі
Дата:2013
Автор: I. B. Sapaev
Формат: Стаття
Мова:English
Опубліковано: 2013
Назва видання:Physical surface engineering
Онлайн доступ:http://jnas.nbuv.gov.ua/article/UJRN-0000928062
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Library portal of National Academy of Sciences of Ukraine | LibNAS
id open-sciencenbuvgovua-88855
record_format dspace
spelling open-sciencenbuvgovua-888552024-04-16T19:27:44Z Investigation of electrical and photovoltaic properties In-CdSxTe1-x-Si-In structure I. B. Sapaev 1999-8074 2013 en Physical surface engineering http://jnas.nbuv.gov.ua/article/UJRN-0000928062 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Physical surface engineering
spellingShingle Physical surface engineering
I. B. Sapaev
Investigation of electrical and photovoltaic properties In-CdSxTe1-x-Si-In structure
format Article
author I. B. Sapaev
author_facet I. B. Sapaev
author_sort I. B. Sapaev
title Investigation of electrical and photovoltaic properties In-CdSxTe1-x-Si-In structure
title_short Investigation of electrical and photovoltaic properties In-CdSxTe1-x-Si-In structure
title_full Investigation of electrical and photovoltaic properties In-CdSxTe1-x-Si-In structure
title_fullStr Investigation of electrical and photovoltaic properties In-CdSxTe1-x-Si-In structure
title_full_unstemmed Investigation of electrical and photovoltaic properties In-CdSxTe1-x-Si-In structure
title_sort investigation of electrical and photovoltaic properties in-cdsxte1-x-si-in structure
publishDate 2013
url http://jnas.nbuv.gov.ua/article/UJRN-0000928062
work_keys_str_mv AT ibsapaev investigationofelectricalandphotovoltaicpropertiesincdsxte1xsiinstructure
first_indexed 2024-04-17T06:20:33Z
last_indexed 2024-04-17T06:20:33Z
_version_ 1796886550709010432