Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs
Saved in:
| Date: | 2012 |
|---|---|
| Main Authors: | V. M. Sorokin, R. V. Konakova, Ya. Ya. Kudryk, A. V. Zinovchuk, R. I. Bigun, Ya. Kudryk, V. V. Shynkarenko |
| Format: | Article |
| Language: | English |
| Published: |
2012
|
| Series: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000350128 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
-
Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs
by: Sorokin, V.M., et al.
Published: (2012) -
Degradation processes in LED modules
by: Sorokin, V.M., et al.
Published: (2016) -
Degradation processes in LED modules
by: V. M. Sorokin, et al.
Published: (2016) -
Development of high-stable contact systems to gallium nitride microwave diodes
by: Belyaev, A.E., et al.
Published: (2007) -
Properties of original and irradiated phosphide-gallium LEDs
by: M. Y. Chumak, et al.
Published: (2024)