Current transport mechanisms in metal - high-k dielectric - silicon structures

Збережено в:
Бібліографічні деталі
Дата:2012
Автор: Y. V. Gomeniuk
Формат: Стаття
Мова:Англійська
Опубліковано: 2012
Назва видання:Semiconductor Physics, Quantum Electronics and Optoelectronics
Онлайн доступ:http://jnas.nbuv.gov.ua/article/UJRN-0000350130
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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spelling open-sciencenbuvgovua-907102024-04-17T16:37:20Z Current transport mechanisms in metal - high-k dielectric - silicon structures Y. V. Gomeniuk 1560-8034 2012 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000350130 Article
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
Y. V. Gomeniuk
Current transport mechanisms in metal - high-k dielectric - silicon structures
title Current transport mechanisms in metal - high-k dielectric - silicon structures
title_full Current transport mechanisms in metal - high-k dielectric - silicon structures
title_fullStr Current transport mechanisms in metal - high-k dielectric - silicon structures
title_full_unstemmed Current transport mechanisms in metal - high-k dielectric - silicon structures
title_short Current transport mechanisms in metal - high-k dielectric - silicon structures
title_sort current transport mechanisms in metal - high-k dielectric - silicon structures
url http://jnas.nbuv.gov.ua/article/UJRN-0000350130
work_keys_str_mv AT yvgomeniuk currenttransportmechanismsinmetalhighkdielectricsiliconstructures