Graded-gap AlInN Gunn diodes
Saved in:
| Date: | 2012 |
|---|---|
| Main Authors: | I. P. Storozhenko, A. N. Yaroshenko, M. V. Kaydash |
| Format: | Article |
| Language: | English |
| Published: |
2012
|
| Series: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000350137 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
Graded-gap AlInN Gunn diodes
by: Storozhenko, I.P., et al.
Published: (2012)
by: Storozhenko, I.P., et al.
Published: (2012)
AlGaInAs graded-dap Gunn diode
by: I. P. Storozhenko, et al.
Published: (2016)
by: I. P. Storozhenko, et al.
Published: (2016)
Gunn Diode with Tunnel p++-n++-cathode
by: Arkusha, Yu. V., et al.
Published: (2013)
by: Arkusha, Yu. V., et al.
Published: (2013)
GaAs Gunn Diodes with AlAs-GaAs-AlAs Resonance Tunnel Cathode
by: Storozhenko, I. P., et al.
Published: (2013)
by: Storozhenko, I. P., et al.
Published: (2013)
Terahertz oscillations in InN Gunn diodes with an active region length of 1 μm and with a graded GaInN layer
by: I. P. Storozhenko, et al.
Published: (2022)
by: I. P. Storozhenko, et al.
Published: (2022)
TERAHERTZ OSCILLATIONS IN InN GUNN DIODES WITH AN ACTIVE REGION LENGTH OF 1 μm AND WITH A GRADED GaInN LAYER
by: Storozhenko, I. P., et al.
Published: (2023)
by: Storozhenko, I. P., et al.
Published: (2023)
Gunn Diode with Induced Channel in Active Region
by: Arkusha, Yu. V., et al.
Published: (2013)
by: Arkusha, Yu. V., et al.
Published: (2013)
Характеристики варизонных AlInN диодов Ганна
by: Кайдаш, М.В.
Published: (2013)
by: Кайдаш, М.В.
Published: (2013)
Alx(z)Ga1-x(z)As Variband Gunn Diodes with Different Cathode Contacts
by: Storozhenko, I. P.
Published: (2013)
by: Storozhenko, I. P.
Published: (2013)
Influence of Temperature on Energy and Frequency Characteristics of mm-Waves Heterocathode Gunn Diodes
by: Arkusha, Yu. V., et al.
Published: (2013)
by: Arkusha, Yu. V., et al.
Published: (2013)
A PLANAR n⁺ –n–n⁺ GaAs DIODE WITH GaInAs-BASED GRADED-GAP ACTIVE SIDE BOUNDARY
by: Zozulia, V. O., et al.
Published: (2024)
by: Zozulia, V. O., et al.
Published: (2024)
The composition effect on the bowing parameter in the cubic InGaN, AlGaN and AlInN alloys
by: Berrah, S., et al.
Published: (2008)
by: Berrah, S., et al.
Published: (2008)
Ohmic contacts based on Pd to indium phosphide Gunn diodes
by: A. E. Belyaev, et al.
Published: (2015)
by: A. E. Belyaev, et al.
Published: (2015)
Ohmic contacts based on Pd to indium phosphide Gunn diodes
by: Belyaev, A.E., et al.
Published: (2015)
by: Belyaev, A.E., et al.
Published: (2015)
Gunn Diode Millimetre-Wave Frequency Shift Mixer-Amplifier
by: Plaksin, S. V., et al.
Published: (2013)
by: Plaksin, S. V., et al.
Published: (2013)
Constructively technological features of HIC for millimeter autodyne on Gunn diodes
by: S. D. Votoropin
Published: (2006)
by: S. D. Votoropin
Published: (2006)
Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis
by: Belyaev, A.E., et al.
Published: (2005)
by: Belyaev, A.E., et al.
Published: (2005)
Metallic Cathode Contact for Gunn Diodes on Basis of Some Novel A3B5 Semiconductor Compounds
by: Arkusha, Yu. V.
Published: (2013)
by: Arkusha, Yu. V.
Published: (2013)
Low doses effect in GaP light-emitting diodes
by: O. M. Hontaruk, et al.
Published: (2016)
by: O. M. Hontaruk, et al.
Published: (2016)
Low doses effect in GaP light-emitting diodes
by: Hontaruk, O.M., et al.
Published: (2016)
by: Hontaruk, O.M., et al.
Published: (2016)
Ultrasound influence on exciton emission of GaP light diodes
by: Gontaruk, O.M., et al.
Published: (2003)
by: Gontaruk, O.M., et al.
Published: (2003)
Radiation influence on characteristics of GaP light emitting diodes
by: Borzakovskyj, A., et al.
Published: (2009)
by: Borzakovskyj, A., et al.
Published: (2009)
Surface distribution of the emitting intensity of GaP light-emitting diodes
by: O. V. Konoreva, et al.
Published: (2013)
by: O. V. Konoreva, et al.
Published: (2013)
Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions
by: Belyaev, A.E., et al.
Published: (2004)
by: Belyaev, A.E., et al.
Published: (2004)
Action of Random Force on Gunn Domain
by: Bass, F. G., et al.
Published: (2012)
by: Bass, F. G., et al.
Published: (2012)
The effect of ion implantation on structural damage in compositionally graded AlGaN layers
by: O. I. Liubchenko, et al.
Published: (2019)
by: O. I. Liubchenko, et al.
Published: (2019)
The effect of ion implantation on structural damage in compositionally graded AlGaN layers
by: Liubchenko, O.I., et al.
Published: (2019)
by: Liubchenko, O.I., et al.
Published: (2019)
Influence of complex defects on electrophysical properties of GaP light emitting diodes
by: O. Konoreva, et al.
Published: (2014)
by: O. Konoreva, et al.
Published: (2014)
Influence of complex defects on electrophysical properties of GaP light emitting diodes
by: Konoreva, O., et al.
Published: (2014)
by: Konoreva, O., et al.
Published: (2014)
Electrical and optical characteristics of GaP diodes, irradiated with 2 MeV electrons
by: O. V. Konoreva, et al.
Published: (2014)
by: O. V. Konoreva, et al.
Published: (2014)
Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics
by: Kanevsky, S.O., et al.
Published: (2003)
by: Kanevsky, S.O., et al.
Published: (2003)
Atomic composition calculation of A3V5 graded band structures for white diodes
by: V. G. Verbitskij, et al.
Published: (2003)
by: V. G. Verbitskij, et al.
Published: (2003)
Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons
by: O. V. Konoreva, et al.
Published: (2015)
by: O. V. Konoreva, et al.
Published: (2015)
Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons
by: Konoreva, O.V., et al.
Published: (2015)
by: Konoreva, O.V., et al.
Published: (2015)
On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes
by: Belyaev, A.E., et al.
Published: (2007)
by: Belyaev, A.E., et al.
Published: (2007)
Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells
by: Konoreva, O., et al.
Published: (2006)
by: Konoreva, O., et al.
Published: (2006)
Impact of traps on current-voltage characteristic of n+-n-n+ diode
by: P. M. Kruglenko
Published: (2017)
by: P. M. Kruglenko
Published: (2017)
Photoelectric converters of UV radiation with graded-gap layers based on CdxZn1–xS solid solutions
by: Ju. N. Bobrenko, et al.
Published: (2014)
by: Ju. N. Bobrenko, et al.
Published: (2014)
Electric field and carrier concentration distributions in the semiconductor under photorefractive Gunn effect
by: Gorley, P.M., et al.
Published: (2006)
by: Gorley, P.M., et al.
Published: (2006)
Radiation hardness of AlAs/GaAs-based resonant tunneling diodes
by: Belyaev, A.A., et al.
Published: (1999)
by: Belyaev, A.A., et al.
Published: (1999)
Similar Items
-
Graded-gap AlInN Gunn diodes
by: Storozhenko, I.P., et al.
Published: (2012) -
AlGaInAs graded-dap Gunn diode
by: I. P. Storozhenko, et al.
Published: (2016) -
Gunn Diode with Tunnel p++-n++-cathode
by: Arkusha, Yu. V., et al.
Published: (2013) -
GaAs Gunn Diodes with AlAs-GaAs-AlAs Resonance Tunnel Cathode
by: Storozhenko, I. P., et al.
Published: (2013) -
Terahertz oscillations in InN Gunn diodes with an active region length of 1 μm and with a graded GaInN layer
by: I. P. Storozhenko, et al.
Published: (2022)