Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films
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| Datum: | 2012 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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2012
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| Schriftenreihe: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Online Zugang: | http://jnas.nbuv.gov.ua/article/UJRN-0000350279 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859543630845313024 |
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| author | Yu. Yu. Bacherikov N. S. Boltovets R. V. Konakova Yu. Kolyadina T. M. Lednova O. B. Okhrimenko |
| author_facet | Yu. Yu. Bacherikov N. S. Boltovets R. V. Konakova Yu. Kolyadina T. M. Lednova O. B. Okhrimenko |
| author_sort | Yu. Yu. Bacherikov |
| collection | Open-Science |
| first_indexed | 2025-07-22T12:19:48Z |
| format | Article |
| id | open-sciencenbuvgovua-90740 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-22T12:19:48Z |
| publishDate | 2012 |
| record_format | dspace |
| series | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spelling | open-sciencenbuvgovua-907402024-04-17T16:37:35Z Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films Yu. Yu. Bacherikov N. S. Boltovets R. V. Konakova Yu. Kolyadina T. M. Lednova O. B. Okhrimenko 1560-8034 2012 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000350279 Article |
| spellingShingle | Semiconductor Physics, Quantum Electronics and Optoelectronics Yu. Yu. Bacherikov N. S. Boltovets R. V. Konakova Yu. Kolyadina T. M. Lednova O. B. Okhrimenko Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films |
| title | Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films |
| title_full | Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films |
| title_fullStr | Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films |
| title_full_unstemmed | Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films |
| title_short | Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films |
| title_sort | interface features of sio2/sic heterostructures according to methods for producing the sio2 thin films |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000350279 |
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