Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films
Збережено в:
| Дата: | 2012 |
|---|---|
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
2012
|
| Назва видання: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000350279 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Репозитарії
Library portal of National Academy of Sciences of Ukraine | LibNAS| id |
open-sciencenbuvgovua-90740 |
|---|---|
| record_format |
dspace |
| spelling |
open-sciencenbuvgovua-907402024-04-17T16:37:35Z Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films Yu. Yu. Bacherikov N. S. Boltovets R. V. Konakova Yu. Kolyadina T. M. Lednova O. B. Okhrimenko 1560-8034 2012 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000350279 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spellingShingle |
Semiconductor Physics, Quantum Electronics and Optoelectronics Yu. Yu. Bacherikov N. S. Boltovets R. V. Konakova Yu. Kolyadina T. M. Lednova O. B. Okhrimenko Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films |
| format |
Article |
| author |
Yu. Yu. Bacherikov N. S. Boltovets R. V. Konakova Yu. Kolyadina T. M. Lednova O. B. Okhrimenko |
| author_facet |
Yu. Yu. Bacherikov N. S. Boltovets R. V. Konakova Yu. Kolyadina T. M. Lednova O. B. Okhrimenko |
| author_sort |
Yu. Yu. Bacherikov |
| title |
Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films |
| title_short |
Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films |
| title_full |
Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films |
| title_fullStr |
Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films |
| title_full_unstemmed |
Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films |
| title_sort |
interface features of sio2/sic heterostructures according to methods for producing the sio2 thin films |
| publishDate |
2012 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0000350279 |
| work_keys_str_mv |
AT yuyubacherikov interfacefeaturesofsio2sicheterostructuresaccordingtomethodsforproducingthesio2thinfilms AT nsboltovets interfacefeaturesofsio2sicheterostructuresaccordingtomethodsforproducingthesio2thinfilms AT rvkonakova interfacefeaturesofsio2sicheterostructuresaccordingtomethodsforproducingthesio2thinfilms AT yukolyadina interfacefeaturesofsio2sicheterostructuresaccordingtomethodsforproducingthesio2thinfilms AT tmlednova interfacefeaturesofsio2sicheterostructuresaccordingtomethodsforproducingthesio2thinfilms AT obokhrimenko interfacefeaturesofsio2sicheterostructuresaccordingtomethodsforproducingthesio2thinfilms |
| first_indexed |
2024-04-18T05:02:32Z |
| last_indexed |
2024-04-18T05:02:32Z |
| _version_ |
1796886747615854592 |