Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films

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Datum:2012
Hauptverfasser: Yu. Yu. Bacherikov, N. S. Boltovets, R. V. Konakova, Yu. Kolyadina, T. M. Lednova, O. B. Okhrimenko
Format: Artikel
Sprache:Englisch
Veröffentlicht: 2012
Schriftenreihe:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Zugang:http://jnas.nbuv.gov.ua/article/UJRN-0000350279
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
_version_ 1859543630845313024
author Yu. Yu. Bacherikov
N. S. Boltovets
R. V. Konakova
Yu. Kolyadina
T. M. Lednova
O. B. Okhrimenko
author_facet Yu. Yu. Bacherikov
N. S. Boltovets
R. V. Konakova
Yu. Kolyadina
T. M. Lednova
O. B. Okhrimenko
author_sort Yu. Yu. Bacherikov
collection Open-Science
first_indexed 2025-07-22T12:19:48Z
format Article
id open-sciencenbuvgovua-90740
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
language English
last_indexed 2025-07-22T12:19:48Z
publishDate 2012
record_format dspace
series Semiconductor Physics, Quantum Electronics and Optoelectronics
spelling open-sciencenbuvgovua-907402024-04-17T16:37:35Z Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films Yu. Yu. Bacherikov N. S. Boltovets R. V. Konakova Yu. Kolyadina T. M. Lednova O. B. Okhrimenko 1560-8034 2012 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000350279 Article
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
Yu. Yu. Bacherikov
N. S. Boltovets
R. V. Konakova
Yu. Kolyadina
T. M. Lednova
O. B. Okhrimenko
Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films
title Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films
title_full Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films
title_fullStr Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films
title_full_unstemmed Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films
title_short Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films
title_sort interface features of sio2/sic heterostructures according to methods for producing the sio2 thin films
url http://jnas.nbuv.gov.ua/article/UJRN-0000350279
work_keys_str_mv AT yuyubacherikov interfacefeaturesofsio2sicheterostructuresaccordingtomethodsforproducingthesio2thinfilms
AT nsboltovets interfacefeaturesofsio2sicheterostructuresaccordingtomethodsforproducingthesio2thinfilms
AT rvkonakova interfacefeaturesofsio2sicheterostructuresaccordingtomethodsforproducingthesio2thinfilms
AT yukolyadina interfacefeaturesofsio2sicheterostructuresaccordingtomethodsforproducingthesio2thinfilms
AT tmlednova interfacefeaturesofsio2sicheterostructuresaccordingtomethodsforproducingthesio2thinfilms
AT obokhrimenko interfacefeaturesofsio2sicheterostructuresaccordingtomethodsforproducingthesio2thinfilms