APA (7th ed.) Citation

Sghaier, H., Bouzaiene, L., Sfaxi, L., & Maaref, H. (2012). A novel Al0. 33Ga0. 67As/In0. 15Ga0. 85As/GaAs quantum well Hall device grown on (111) GaAs).

Chicago Style (17th ed.) Citation

Sghaier, H., L. Bouzaiene, L. Sfaxi, and H. Maaref. A Novel Al0. 33Ga0. 67As/In0. 15Ga0. 85As/GaAs Quantum Well Hall Device Grown on (111) GaAs). 2012.

MLA (8th ed.) Citation

Sghaier, H., et al. A Novel Al0. 33Ga0. 67As/In0. 15Ga0. 85As/GaAs Quantum Well Hall Device Grown on (111) GaAs). 2012.

Warning: These citations may not always be 100% accurate.