A novel Al0. 33Ga0. 67As/In0. 15Ga0. 85As/GaAs quantum well Hall device grown on (111) GaAs)

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Datum:2012
Hauptverfasser: H. Sghaier, L. Bouzaiene, L. Sfaxi, H. Maaref
Format: Artikel
Sprache:English
Veröffentlicht: 2012
Schriftenreihe:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Zugang:http://jnas.nbuv.gov.ua/article/UJRN-0000350292
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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spelling open-sciencenbuvgovua-907532024-04-17T16:37:41Z A novel Al0. 33Ga0. 67As/In0. 15Ga0. 85As/GaAs quantum well Hall device grown on (111) GaAs) H. Sghaier L. Bouzaiene L. Sfaxi H. Maaref 1560-8034 2012 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000350292 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Semiconductor Physics, Quantum Electronics and Optoelectronics
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
H. Sghaier
L. Bouzaiene
L. Sfaxi
H. Maaref
A novel Al0. 33Ga0. 67As/In0. 15Ga0. 85As/GaAs quantum well Hall device grown on (111) GaAs)
format Article
author H. Sghaier
L. Bouzaiene
L. Sfaxi
H. Maaref
author_facet H. Sghaier
L. Bouzaiene
L. Sfaxi
H. Maaref
author_sort H. Sghaier
title A novel Al0. 33Ga0. 67As/In0. 15Ga0. 85As/GaAs quantum well Hall device grown on (111) GaAs)
title_short A novel Al0. 33Ga0. 67As/In0. 15Ga0. 85As/GaAs quantum well Hall device grown on (111) GaAs)
title_full A novel Al0. 33Ga0. 67As/In0. 15Ga0. 85As/GaAs quantum well Hall device grown on (111) GaAs)
title_fullStr A novel Al0. 33Ga0. 67As/In0. 15Ga0. 85As/GaAs quantum well Hall device grown on (111) GaAs)
title_full_unstemmed A novel Al0. 33Ga0. 67As/In0. 15Ga0. 85As/GaAs quantum well Hall device grown on (111) GaAs)
title_sort novel al0. 33ga0. 67as/in0. 15ga0. 85as/gaas quantum well hall device grown on (111) gaas)
publishDate 2012
url http://jnas.nbuv.gov.ua/article/UJRN-0000350292
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