Contribution of f- and g- transitions to electron intervalley scattering of n-Si at temperatures 300 to 450 K
Збережено в:
| Дата: | 2012 |
|---|---|
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
2012
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| Назва видання: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000350293 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Library portal of National Academy of Sciences of Ukraine | LibNAS| id |
open-sciencenbuvgovua-90754 |
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open-sciencenbuvgovua-907542024-04-17T16:37:41Z Contribution of f- and g- transitions to electron intervalley scattering of n-Si at temperatures 300 to 450 K V. M. Ermakov V. V. Kolomoets L. I. Panasyuk P. F. Nazarchuk L. V. Yashchynskyi 1560-8034 2012 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000350293 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spellingShingle |
Semiconductor Physics, Quantum Electronics and Optoelectronics V. M. Ermakov V. V. Kolomoets L. I. Panasyuk P. F. Nazarchuk L. V. Yashchynskyi Contribution of f- and g- transitions to electron intervalley scattering of n-Si at temperatures 300 to 450 K |
| format |
Article |
| author |
V. M. Ermakov V. V. Kolomoets L. I. Panasyuk P. F. Nazarchuk L. V. Yashchynskyi |
| author_facet |
V. M. Ermakov V. V. Kolomoets L. I. Panasyuk P. F. Nazarchuk L. V. Yashchynskyi |
| author_sort |
V. M. Ermakov |
| title |
Contribution of f- and g- transitions to electron intervalley scattering of n-Si at temperatures 300 to 450 K |
| title_short |
Contribution of f- and g- transitions to electron intervalley scattering of n-Si at temperatures 300 to 450 K |
| title_full |
Contribution of f- and g- transitions to electron intervalley scattering of n-Si at temperatures 300 to 450 K |
| title_fullStr |
Contribution of f- and g- transitions to electron intervalley scattering of n-Si at temperatures 300 to 450 K |
| title_full_unstemmed |
Contribution of f- and g- transitions to electron intervalley scattering of n-Si at temperatures 300 to 450 K |
| title_sort |
contribution of f- and g- transitions to electron intervalley scattering of n-si at temperatures 300 to 450 k |
| publishDate |
2012 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0000350293 |
| work_keys_str_mv |
AT vmermakov contributionoffandgtransitionstoelectronintervalleyscatteringofnsiattemperatures300to450k AT vvkolomoets contributionoffandgtransitionstoelectronintervalleyscatteringofnsiattemperatures300to450k AT lipanasyuk contributionoffandgtransitionstoelectronintervalleyscatteringofnsiattemperatures300to450k AT pfnazarchuk contributionoffandgtransitionstoelectronintervalleyscatteringofnsiattemperatures300to450k AT lvyashchynskyi contributionoffandgtransitionstoelectronintervalleyscatteringofnsiattemperatures300to450k |
| first_indexed |
2024-04-18T05:02:36Z |
| last_indexed |
2024-04-18T05:02:36Z |
| _version_ |
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