Contribution of f- and g- transitions to electron intervalley scattering of n-Si at temperatures 300 to 450 K
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| Datum: | 2012 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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2012
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| Schriftenreihe: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Online Zugang: | http://jnas.nbuv.gov.ua/article/UJRN-0000350293 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859543634005721088 |
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| author | V. M. Ermakov V. V. Kolomoets L. I. Panasyuk P. F. Nazarchuk L. V. Yashchynskyi |
| author_facet | V. M. Ermakov V. V. Kolomoets L. I. Panasyuk P. F. Nazarchuk L. V. Yashchynskyi |
| author_sort | V. M. Ermakov |
| collection | Open-Science |
| first_indexed | 2025-07-22T12:19:57Z |
| format | Article |
| id | open-sciencenbuvgovua-90754 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-22T12:19:57Z |
| publishDate | 2012 |
| record_format | dspace |
| series | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spelling | open-sciencenbuvgovua-907542024-04-17T16:37:41Z Contribution of f- and g- transitions to electron intervalley scattering of n-Si at temperatures 300 to 450 K V. M. Ermakov V. V. Kolomoets L. I. Panasyuk P. F. Nazarchuk L. V. Yashchynskyi 1560-8034 2012 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000350293 Article |
| spellingShingle | Semiconductor Physics, Quantum Electronics and Optoelectronics V. M. Ermakov V. V. Kolomoets L. I. Panasyuk P. F. Nazarchuk L. V. Yashchynskyi Contribution of f- and g- transitions to electron intervalley scattering of n-Si at temperatures 300 to 450 K |
| title | Contribution of f- and g- transitions to electron intervalley scattering of n-Si at temperatures 300 to 450 K |
| title_full | Contribution of f- and g- transitions to electron intervalley scattering of n-Si at temperatures 300 to 450 K |
| title_fullStr | Contribution of f- and g- transitions to electron intervalley scattering of n-Si at temperatures 300 to 450 K |
| title_full_unstemmed | Contribution of f- and g- transitions to electron intervalley scattering of n-Si at temperatures 300 to 450 K |
| title_short | Contribution of f- and g- transitions to electron intervalley scattering of n-Si at temperatures 300 to 450 K |
| title_sort | contribution of f- and g- transitions to electron intervalley scattering of n-si at temperatures 300 to 450 k |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000350293 |
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