Studying of properties of silicon junctions with the Schottky barrier fabricated on the base of amorphous and polycrystalline various metal alloys

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Бібліографічні деталі
Дата:2012
Автор: I. G. Pashaev
Формат: Стаття
Мова:Англійська
Опубліковано: 2012
Назва видання:Progress in Physics of Metals
Онлайн доступ:http://jnas.nbuv.gov.ua/article/UJRN-0000469481
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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spelling open-sciencenbuvgovua-918762024-04-17T16:45:23Z Studying of properties of silicon junctions with the Schottky barrier fabricated on the base of amorphous and polycrystalline various metal alloys I. G. Pashaev 1608-1021 2012 en Progress in Physics of Metals http://jnas.nbuv.gov.ua/article/UJRN-0000469481 Article
spellingShingle Progress in Physics of Metals
I. G. Pashaev
Studying of properties of silicon junctions with the Schottky barrier fabricated on the base of amorphous and polycrystalline various metal alloys
title Studying of properties of silicon junctions with the Schottky barrier fabricated on the base of amorphous and polycrystalline various metal alloys
title_full Studying of properties of silicon junctions with the Schottky barrier fabricated on the base of amorphous and polycrystalline various metal alloys
title_fullStr Studying of properties of silicon junctions with the Schottky barrier fabricated on the base of amorphous and polycrystalline various metal alloys
title_full_unstemmed Studying of properties of silicon junctions with the Schottky barrier fabricated on the base of amorphous and polycrystalline various metal alloys
title_short Studying of properties of silicon junctions with the Schottky barrier fabricated on the base of amorphous and polycrystalline various metal alloys
title_sort studying of properties of silicon junctions with the schottky barrier fabricated on the base of amorphous and polycrystalline various metal alloys
url http://jnas.nbuv.gov.ua/article/UJRN-0000469481
work_keys_str_mv AT igpashaev studyingofpropertiesofsiliconjunctionswiththeschottkybarrierfabricatedonthebaseofamorphousandpolycrystallinevariousmetalalloys