Influence of tin impurity on recombination characteristics in γ-irradiated n-Si
Saved in:
| Date: | 2012 |
|---|---|
| Main Author: | M. M. Krasko |
| Format: | Article |
| Language: | English |
| Published: |
2012
|
| Series: | Ukrainian journal of physics |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000685836 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
Influence of tin impurity on recombination characteristics in γ-irradiated n-Si
by: M. M. Krasko
Published: (2012)
by: M. M. Krasko
Published: (2012)
Influence of tin impurity on degradation of conductivity in electron-irradiated n-Si
by: M. M. Krasko
Published: (2013)
by: M. M. Krasko
Published: (2013)
Influence of tin impurity on degradation of conductivity in electron-irradiated n-Si
by: M. M. Krasko
Published: (2013)
by: M. M. Krasko
Published: (2013)
Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing
by: M. M. Krasko, et al.
Published: (2018)
by: M. M. Krasko, et al.
Published: (2018)
Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing
by: M. M. Krasko, et al.
Published: (2018)
by: M. M. Krasko, et al.
Published: (2018)
Influence of γ-irradiation on current-voltage characteristics of TIGaSe₂ single crystal
by: Ismailov, A.A., et al.
Published: (2009)
by: Ismailov, A.A., et al.
Published: (2009)
Study of recombination and electric properties of p-Si crystals irradiated with electrons
by: T. A. Pagava, et al.
Published: (2012)
by: T. A. Pagava, et al.
Published: (2012)
Study of recombination and electric properties of p-Si crystals irradiated with electrons
by: T. A. Pagava, et al.
Published: (2012)
by: T. A. Pagava, et al.
Published: (2012)
Research of recombination characteristics of Cz-Si implanted with iron ions
by: D. V. Gamov, et al.
Published: (2013)
by: D. V. Gamov, et al.
Published: (2013)
Research of recombination characteristics of Cz-Si implanted with iron ions
by: D. V. Hamov, et al.
Published: (2013)
by: D. V. Hamov, et al.
Published: (2013)
Еlectret properties of γ-irradiated composites of ultrahigh molecular weight polyethylene/α-SiO₂
by: Magerramov, A.M., et al.
Published: (2018)
by: Magerramov, A.M., et al.
Published: (2018)
Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb>
by: Gaidar, G.P.
Published: (2014)
by: Gaidar, G.P.
Published: (2014)
Investigation of the influence of isovalent impurity of silicon and -irradiation (60Co) on electrophysical parameters of n-Ge Sb
by: G. P. Gaidar
Published: (2014)
by: G. P. Gaidar
Published: (2014)
Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (60Co) n-Si crystals
by: G. P. Gaidar
Published: (2018)
by: G. P. Gaidar
Published: (2018)
Two-channel gettering of recombination-active impurity in polycrystalline solar silicon
by: V. G. Litovchenko, et al.
Published: (2012)
by: V. G. Litovchenko, et al.
Published: (2012)
Two-channel gettering of recombination-active impurity in polycrystalline solar silicon
by: V. H. Lytovchenko, et al.
Published: (2012)
by: V. H. Lytovchenko, et al.
Published: (2012)
Influence of γ-irradiation on kinetic effects in indium-alloyed cadmium antimonide single crystals
by: Koval, Yu.V.
Published: (2006)
by: Koval, Yu.V.
Published: (2006)
Radiative recombination in initial and electron-irradiated GaP crystals
by: O. Hontaruk, et al.
Published: (2010)
by: O. Hontaruk, et al.
Published: (2010)
IR spectral manifestation of tin impurity sites in titanium dioxide
by: O. V. Smirnova, et al.
Published: (2021)
by: O. V. Smirnova, et al.
Published: (2021)
Peculiariries of thermoannealing in n-Si and n-Ge crystals with oxygen impurity
by: P. I. Baranskii, et al.
Published: (2012)
by: P. I. Baranskii, et al.
Published: (2012)
Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity
by: Baranskii, P.I., et al.
Published: (2012)
by: Baranskii, P.I., et al.
Published: (2012)
Influence of г-irradiation on initial magnetic permeability of amorphous and nanocrystalline Fe−Si−B-based alloys
by: Yu. Povarchuk, et al.
Published: (2012)
by: Yu. Povarchuk, et al.
Published: (2012)
Influence of г-irradiation on initial magnetic permeability of amorphous and nanocrystalline Fe−Si−B-based alloys
by: Yu. Povarchuk, et al.
Published: (2012)
by: Yu. Povarchuk, et al.
Published: (2012)
Impact of γ-irradiation on dielectric and electric properties of TlInS₂ crystals
by: Sardarly, R.M., et al.
Published: (2019)
by: Sardarly, R.M., et al.
Published: (2019)
γ-decay of resonance-like structure observed in ³⁰Si(p,γ)³¹p reaction
by: Kachan, A.S., et al.
Published: (2002)
by: Kachan, A.S., et al.
Published: (2002)
Modification of cadmium accumulation by maize seedlings by acute γ-irradiation of seeds
by: Yu. O. Kutlakhmedov, et al.
Published: (2016)
by: Yu. O. Kutlakhmedov, et al.
Published: (2016)
Structure formation and wear resistance of TiN-Ni ESA coatings after solar irradiation treatment
by: Paustovsky, A.V., et al.
Published: (2005)
by: Paustovsky, A.V., et al.
Published: (2005)
Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation
by: G. V. Milenin, et al.
Published: (2016)
by: G. V. Milenin, et al.
Published: (2016)
Magnetic and Relaxation Phenomena in Film Si—TiN—Fe Heterostructures with Carbon Nanotubes
by: E. M. Rudenko, et al.
Published: (2015)
by: E. M. Rudenko, et al.
Published: (2015)
Electric-physical characteristics of pressureless sintered AlN–TiN ceramic composite
by: I. P. Fesenko, et al.
Published: (2022)
by: I. P. Fesenko, et al.
Published: (2022)
Tin-induced crystallization of amorphous silicon under pulsed laser irradiation
by: V. B. Neimash, et al.
Published: (2017)
by: V. B. Neimash, et al.
Published: (2017)
Tin-induced crystallization of amorphous silicon under pulsed laser irradiation
by: V. B. Neimash, et al.
Published: (2017)
by: V. B. Neimash, et al.
Published: (2017)
Influence of -irradiation (60So) on the concentration and mobility of carriers in Ge and Si single crystals of n-type
by: G. P. Gaidar
Published: (2012)
by: G. P. Gaidar
Published: (2012)
Biochemical effects of combined action of γ-irradiation and paclitaxel on anaplastic thyroid cancer cells
by: V. M. Pushkarev, et al.
Published: (2013)
by: V. M. Pushkarev, et al.
Published: (2013)
Fitness components in the offsprings of Drosophila melanogaster meig. after acute γ-irradiation
by: D. A. Skorobagatko, et al.
Published: (2015)
by: D. A. Skorobagatko, et al.
Published: (2015)
Influence of the ultrasonic irradiation on properties of the injection sensor based on pSi-nCdS-n+CdS — structure and surface states density pSi-nCdS — heterojunction
by: I. B. Sapaev, et al.
Published: (2014)
by: I. B. Sapaev, et al.
Published: (2014)
The Influence of Plastic Deformation on the Defect-Impurity State and Magnetic Properties of Silicon (Cz-Si)
by: V. A. Makara, et al.
Published: (2013)
by: V. A. Makara, et al.
Published: (2013)
Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation
by: V. B. Neimash, et al.
Published: (2017)
by: V. B. Neimash, et al.
Published: (2017)
Hall-effect study of disordered regions in proton-irradiated n-Si crystals
by: T. A. Pagava, et al.
Published: (2013)
by: T. A. Pagava, et al.
Published: (2013)
Hall-effect study of disordered regions in proton-irradiated n-Si crystals
by: T. A. Pagava, et al.
Published: (2013)
by: T. A. Pagava, et al.
Published: (2013)
Similar Items
-
Influence of tin impurity on recombination characteristics in γ-irradiated n-Si
by: M. M. Krasko
Published: (2012) -
Influence of tin impurity on degradation of conductivity in electron-irradiated n-Si
by: M. M. Krasko
Published: (2013) -
Influence of tin impurity on degradation of conductivity in electron-irradiated n-Si
by: M. M. Krasko
Published: (2013) -
Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing
by: M. M. Krasko, et al.
Published: (2018) -
Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing
by: M. M. Krasko, et al.
Published: (2018)