2025-02-23T11:27:52-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22open-sciencenbuvgovua-94144%22&qt=morelikethis&rows=5
2025-02-23T11:27:52-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22open-sciencenbuvgovua-94144%22&qt=morelikethis&rows=5
2025-02-23T11:27:52-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T11:27:52-05:00 DEBUG: Deserialized SOLR response
Investigation of the saturation effect of the drain current of a field-effect transistor with series-connected channels

Investigation of the saturation effect of the drain current of a field-effect transistor with series-connected channels

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Bibliographic Details
Main Authors: A. V. Karimov, D. M. Jodgorova, O. A. Abdulkhaev, E. N. Jakubov, Sh. Sh. Juldashev, A. A. Turaev
Format: Article
Language:English
Published: 2012
Series:Physical surface engineering
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000908768
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Internet

http://jnas.nbuv.gov.ua/article/UJRN-0000908768

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